Session 5B-1
Endurance and Scaling Trends of Novel Access-Devices
for Multi-Layer Crosspoint-Memory
based on Mixed-Ionic-Electronic-Conduction (MIEC) Materials
| We demonstrate compact integrated arrays of BEOL-friendly novel access devices (AD) based on Cu-containing MIEC materials. In addition to the high current densities and large ON/OFF ratios needed for Phase Change Memory (PCM), scaled-down ADs also exhibit larger voltage margin Vm, ultra-low leakage (<10pA), and much higher endurance (>1e8) at high current densities. Using CMP, all-good 5x10 AD arrays with Vm > 1.1V are demonstrated in a simplified CMOS-compatible, diode-in-via (DIV) process. |