Session 5B-2

Phase-change memory driven by poly-Si MOS transistor
with low cost and high-programming gigabyte-per-second throughput

 

Abstract

A phase-change memory (PCM) driven by poly-Si MOS transistors was fabricated. The thin phase-change-material layer deposited directly on the channel silicon layer in the PCM enables low-current reset operation (45 µA) compared to the conventional memory structure. This memory-cell configuration enables both a poly-Si MOS-driven stackable memory array and large degree programming parallelization. A contactless simple cell structure makes it possible to reduce the cell size to 4F2 and the number of process steps. Low cost and gigabyte-per-second programming throughput are thus made possible by this stackable phase-change memory.