Session 6B-2

Non-Volatile Graphene channel Memory
for flexible electronics
and 3D multi-stack ultra-high-density data storages

 

Abstract

A non-volatile memory (NVM) exploiting single-layer graphene (SLG) as a channel material has been fabricated through low temperature processes below 250°C and characterized for the first time. The injection of electrons into the trap sites of a triple high-k dielectrics stack results in a memory window of more than 9.0V. The NVGMs fabricated by processes compatible with flat panel display (FPD) can be utilized for flexible electronics and high-density 3D multi-stack memory cells.