Session 6B-3

A Novel BEOL Transistor (BETr)
with InGaZnO Embedded in Cu-Interconnects
for On-chip High Voltage I/Os in Standard CMOS LSIs

 

Abstract

A novel BEOL transistor is developed in Cu interconnects with wide-band-gap InGaZnO (IGZO) film for on-chip high voltage I/Os in standard CMOS LSIs only by one additional mask. Thickness control of both the IGZO channel and gate SiN is a key to achieve high on-current with low leakage. Ability of high voltage operation with small feature size is expected as an interface bridge for signal conversion between CMOS core-logics and peripheral devices driven with high-voltages.