Session 6B-4
Impact of Oxidation Induced Atomic Disorder
in Narrow Si Nanowires on Transistor Performance
| Theoretical investigations are presented for the effects of atomic disorder, which is always present in Si/SiO2 interface, on the device performance for the first time. We show that the drain current is significantly reduced by a factor of 2 due to random configuration of Si atoms near the Si/SiO2 interfaces in a nanowire with 2.7 nm width. NFET is more easily affected by the disorder because of localized states near the conduction-band bottom. Suppression of the atomic disorder is a key to obtain good performance of nanowire FETs. |