Session 6B-5

Comparison of Performance, Switching Energy
and Process Variations for the TFET and MOSFET in Logic

 

Abstract

A detailed circuit assessment of 20nm TFET versus MOSFET operating near device threshold supply voltage, including the consideration of process variations, is reported. For very low power logic applications requiring near device threshold supply voltage, the results show that TFET logic can operate at equal standby power and switching energy to MOSFET, but with a~8x performance advantage. The study also shows that device parameter variation is not a factor for differentiation between MOSFET and TFET.