Session 7-1

ETSOI CMOS for System-on-Chip Applications
Featuring 22nm Gate Length, Sub-100nm Gate Pitch,
and 0.08µm² SRAM Cell

 

Abstract

We report ETSOI CMOS with 22nm gate length and sub-100nm gate pitch for system-on-chip (SoC) applications. Competitive drive current of Ion=1150/1050µA/µm at Ioff=100nA/µm for high performance (HP) and Ion=920/880µA/µm at Ioff=1nA/µm for low power (LP) NFET/PFET, respectively, at VDD=1V. High density 6-T SRAM cells down to 0.08µm2 are demonstrated. ETSOI ring oscillator exhibits 25% improvement compared to 28nm bulk LP. Cost-free ETSOI epitaxy resistors and gate diodes are also demonstrated.