Session 7-4

1mA/µm-I_ON Strained SiGe_45%-IFQW pFETs
With Raised and Embedded S/D

Abstract

A 2nd generation of SiGe-IFQW pFETs is presented in this work. SiGe25%-embedded Source/Drain was implemented, leading to an excellent short channel control and logic performance. No narrow-width effect was found and a multi-VTH strategy is also offered. Performance of the strained-IFQW pFETs was finally demonstrated at lower VDD.