Session 8B-3

From mean values to distributions of BTI lifetime
of deeply scaled FETs through atomistic understanding
of the degradation

 

Abstract

Since only a few gate oxide defects are expected in future nm-sized CMOS devices, the well-defined Bias-Temperature-Instability (BTI) lifetime of large devices becomes distributed. This paradigm shift is addressed by demonstrating the methodology to predict the VTH shift distributions after BTI stress: the critical reliability issue in modern CMOS technologies. The sources of time dependent variability are identified through the understanding of the atomistic impact of individual traps.