Session 8B-4

Investigation of the Self-Heating Effect
on Hot-Carrier Characteristics for Packaged High Voltage Devices

 

Abstract

HVNMOS device degradation due to AC/DC hot carrier injection (HCI) stress between package level (PL) and wafer level (WL) is char-acterized and their relationship to the power generation is quantified. It is observed that Idlin degradation in PL is worse compared to WL dur-ing DC HCI stress due to excessive self-heating (SH) in PL compared to WL. It is also validated that SH mechanism is the dominant factor for Idlin degradation compared to HCI impact ionization during pack-aged HVNMOS HCI stress. A new reliability characterization method-ology for HVNMOS is also proposed, which eliminates the PL SH effect and boost up the product safe-operating-area (SOA) capability.