Session 9A-2

Impact of Back Bias on Ultra-Thin Body
and BOX (UTBB) Devices

 

Abstract

We reported a thorough study of the back bias impact on ultra-thin body and BOX (UTBB) devices. The temperature effect, SCE, GIDL and reliability from back bias were explored. Vt modulation from back bias is well maintained across a wide temperature range. Contrary to Bulk, GIDL is reduced from reverse bias in UTBB devices. The impact on aggressively scaled circuits, such as 100nm CPP ROs and 0.08µm2 6-T SRAM, was demonstrated for the first time.