Session 9A-3
Stress-induced Performance Enhancement
in Si Ultra-Thin Body FD-SOI MOSFETs: Impacts of Scaling
| A detailed study of the impact of channel stress on (100)/<110> Ultra-Thin Body and BOX (UT2B) Fully Depleted SOI (FD-SOI) MOSFET performance is presented. Stress-induced mobility enhancement diminishes with Si body thickness scaling below 5nm for electrons but not for holes. Performance enhancement is maintained with gate-length scaling. |