Session 9B-1

Towards 1X DRAM: Improved leakage 0.4 nm EOT STO-based MIMcap
and explanation of leakage reduction mechanism showing further potential

 

Abstract

We report record JG-EOT DRAM MIMcap of 10-7 A/cm2 at 0.40 nm EOT with RuOx/TiOx/Sr-rich STO. We explain origin of low JG-EOT. TiOx reduces EOT on TiN, Ru or RuOx, but RuOx is needed for low JG. We measured FLP at STO midgap and same barrier (~1.6 eV) from all BE. Leakage is controlled by similar traps in STO for all stacks and BE, and attribute improvement with RuOx to local STO trap density reduction.