Session
4 – TAPA I
A/D Converters
Wednesday, June 13, 1:30 p.m.
Chairpersons: T.C.
Carusone, University of Toronto
M.
Ito, Renesas Electronics Corp.
4.1 - 1:30 p.m.
A
6b 3GS/s 11mW Fully Dynamic Flash ADC in 40nm CMOS with Reduced Number of
Comparators, Y.-S.
Shu, MediaTek Inc.
A 6b 3GS/s fully dynamic flash ADC is fabricated in 40nm CMOS
and occupies 0.021mm2. Dynamic comparators with digitally controlled built-in
offset are realized with imbalanced tails. Half of the comparators are
substituted with simple SR latches. The ADC achieves SNDRs of 36.2dB and 33.1dB
at DC and Nyquist, respectively, while consuming 11mW from a 1.1V supply.
4.2 - 1:55 p.m.
An
Event-Driven, Alias-Free ADC with Signal-Dependent Resolution, C. Weltin-Wu, Y. Tsividis, Columbia
University
A clockless 8b ADC in 130nm CMOS uses a time-varying
comparison window to dynamically vary resolution, and input-dependent dynamic
bias, to maintain SNDR while saving power. Alias-free operation with SNDR in
the range of 47-54dB, which partly exceeds the theoretical limit of 8b
conventional converters, is achieved over a 20kHz bandwidth with 3-9µW power
from a 0.8V supply.
4.3 - 2:20 p.m.
A
10-Bit 1-GHz 33-mW CMOS ADC, B.D.
Sahoo, B. Razavi, University of California, Los Angeles
A pipelined ADC digitally calibrates capacitor mismatches in
its 4-bit first stage and the gain error in the first 5 stages. Using a
one-stage op amp with a gain of 10 and realized in 65-nm CMOS technology, the
ADC digitizes a 490-MHz input with an SNDR of 52.4 dB, achieving an FOM of
0.097pJ/conversion-step.
4.4 - 2:45 p.m.
A
61.5dB SNDR Pipelined ADC Using Simple Highly-Scalable Ring Amplifiers, B. Hershberg, S. Weaver, K. Sobue*, S.
Takeuchi*, K. Hamashita*, U.-K. Moon, Oregon State University, Asahi Kasei
Microdevices
A ring amplifier based pipelined ADC is presented that uses
simple cells constructed from small inverters and capacitors to perform amplification.
The basic ring amplifier structure is characterized and demonstrated to be
highly scalable, power efficient, and compression-immune (inherent rail-to-rail
output swing). The prototype 10.5-bit ADC, fabricated in 0.18µm CMOS
technology, achieves 61.5dB SNDR at a 30MHz sampling rate and consumes 2.6mW,
resulting in
a FoM of 90fJ/conversion-step.