Session 5A-3

Re-examination of Flat-Band Voltage Shift for High-k MOS Devices

 

Abstract

We have systematically investigated the VFB shift of the top/bottom-high-k dielectrics by the precise controlling of each high-k layer at atomic scale. We demonstrate for the first time that the high-k/IL-SiO2 interface primarily determines the VFB shifts, and the gate/high-k interface plays little role, at least for the low temperature processed high-k gate stack with HfO2, Al2O3 and Y2O3.