Session 5B-2

A Robust SOI SRAM Architecture by UsingAdvanced ABC
Technology for 32nm Node andBeyond LSTP Devices

 

Abstract

This paper presents that Advanced Actively Body-bias Controlled (Advanced ABC) technology contributes to enhancing operation margins of SRAMs. We successfully realize an enhancement of static noise margin (SNM) by using a body bias of load transistors for the first time. The write and read margins of 65nm-node SRAMs are improved by 20% and 16%, respectively. Furthermore, it is found that SNM of 32nm-node SRAM is enhanced by 27%. It is summarized that this technology is one of countermeasures for emerging generations.