Session 4B-4
BSIM-MG: A Versatile Multi-Gate FET Model
for Mixed-Signal Design
Abstract
| A full-fledged, versatile, surface-potential based multi-gate FET compact model - BSIM-MG, has been developed for mixed-signal design. For the first time, a MG-FET model captures effect of finite body doping on electrical characteristics of MG-FETs. A unique field penetration length model has been developed to model the short channel effects in MG-FETs. The model has been verified against TCAD and experimental data for both bulk FinFETs and SOI FinFETs. |