Session 3B-2

Reliability Perspective of High-k Gate Stack Assessed by
Temperature Dependence of DielectricBreakdown

 

Abstract

In this paper, apparent difference of the dielectric breakdown behavior between high-k and conventional SiO2 has been investigated by the temperature dependence of TDDB lifetime. The temperature dependence of dielectric breakdown in high-k stack can be explained by the mechanism identical to the conventional SiO2. It has been also demostrated that the temperature acceleration rate of TDDB lifetime under -VG stress rapidly increases with the thinning of interfacial layer similar with the case of conventional SiO2.