Session 4A-2

Strained Si Channel MOSFETs with EmbeddedSilicon
Carbon Formed by Solid Phase Epitaxy

 

Abstract

Current drive enhancement is demonstrated in sub-40 nm NFETs with strained silicon carbon source and drain using a novel solid-phase epitaxy technique for the first time. The very simple process uses no recess etch or epi deposition, adds minimal process cost, and can be easily integrated into a standard CMOS process. With record high 1.65 at% substitutional carbon concentration, 615 MPa uniaxial tensile stress was introduced in the channel, leading to 35% electron mobility improvement.