Session 5B-4

High Speed and Highly Cost effective 72M bit density S³ SRAM Technology with Doubly
Stacked Si Layers, Peripheral only CoSix layers and Tungsten Shunt
W/L Scheme for Standalone and Embedded Memory

 

Abstract

Highly cost effective and high speed 72M bit density s3 SRAM technology was successfully achieved for standalone memory and embeded memory with selective epitaxial growth of Si film, low thermal SSTFT process, periphery only Co salicidation, and W shunt wordline scheme.