Session 8A-1

Stress Dependence and Poly-Pitch ScalingCharacteristics
of (110) PMOS Drive Current

 

Abstract

This work demonstrates that the two times mobility advantage of (110) PMOS over (100) PMOS is maintained down to 190nm poly pitch for devices under compressive stress. 45-nm-node (110) PMOS with 3.5GPa compressive liner demonstrate record Ion=800uA/um at Ioff=100nA/um for 190nm poly pitch without eSiGe stressor. Additionally, (110) PMOS show better scalability, with 15% smaller total Ion degradation than (100) PMOS when poly-pitch scales from 250nm to 190nm.