35th Anniversary Celebration of the Symposium on VLSI Technology
35th anniversary of the Symposium on VLSI Technology was celebrated during the conference, and the following for authors were awarded special prizes to praise their contribution to the VLSI community in these 35 years.
Most Prolific Author Award
This award will be given to the author whose papers are the most accepted to the Symposium in these 35 years. The 35-year period is divided into two terms, due to the different trend of the contributed countries.
- 1981-2000
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Prof. Chenming Hu (UCB) Number of accepted papers: 31 papers
I am honored to be recognized by the VLSI Technology Symposium as the author that contributed the most papers during its first twenty years 1981-2000.
The Symposium was founded as a US-Japan bilateral forum and quickly grew into a truly global event.
The industry and the technology may change, the Symposium will thrive for many more 35 years. - 2001-2015
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Ph.D. Kinam Kim (Samsung Electronics) Number of accepted papers: 46 papers
I deeply appreciate this recognition from the VLSI committee, and it is a great honor for me to receive the "Most Prolifc Author Award" this year.
I once again offer my sincerest gratitude to the committee members, and we as one shall continue to do our hardest to overcome the great challenges ahead to advance semiconductor technologies for many generations to come.
Most Frequently Cited Paper Award
This award will be given to the author whose papers are the most frequently cited in the IEEE Xplore, Scopus & Google Scholar in these 35 years.
- 1981-2000
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Naohiko Kimizuka et al. (NEC)*
Title: "The impact of bias temperature instability for direct tunneling ultra-thin gate oxide on MOSFET scaling"
1999 Symp. on VLSI Tech., pp.73-74, (1999)
by 65 papers in IEEE Xplorer (211 by Google scholar)* Dr. Kimizuka currently works in Sony Corp.
I would like to express my appreciation to VLSI committee members.
It is a great honor for me to receive this wonderful award.
I also thank deeply to every person who had taken an interest in our studies.
The paper described that aggressive scaling of gate oxide thickness lead NBTI to be a potential threat and that NBTI had become a limiting factor in scaling CMOS. With another presentation of the following year in this symposium, if our studies of NBTI have contributed to improve reliability of CMOS devices, we are very glad. Thanks so much. - 2001-2014
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Leland Chang et al. (IBM)
Title: "Stable SRAM Cell design for the 32 nm node and beyond"
2005 Symp. on VLSI Tech., pp128-129, (2005)
by 150 papers in IEEE Xplorer (432 by Google Scholar)
Congratulations to the symposium for leading the VLSI community and showcasing its top technological advances for the past 35 years!
I would especially like to thank the organizers for their sustained efforts in steering the conference, particularly in their early recognition of the need to create strong ties between the technology and circuits communities.
I personally believe that the symposium provides important opportunities to engage leaders across disciplines in a uniquely intimate setting - an aspect that will no doubt become only more important in the coming years.
It is truly humbling to receive this award given the consistently strong paper quality we have all come to expect at the conference. I would like to wish the symposium continued success in the future, and I look forward to seeing how the next 35 years will evolve!