Award Winner – Technology
- Home
- Award Winner – Technology
2014
Recipient: Heng Wu
Paper: Ge CMOS: Breakthroughs of nFETs ( Imax= 714 mA/mm, gmax= 590 mS/mm) by Recessed Channel and S/D
Authors: Heng Wu, Mengwei Si, Lin Dong, Jingyun Zhang, Peide Ye
Affiliation: Purdue University
2013
Recipient: ChoongHyun Lee
Paper: Enhancement of High-Ns Electron Mobility in Sub-nm EOT Ge n-MOSFETs
Authors: ChoongHyun Lee, Cimang Lu, Toshiyuki Tabata, Tomonori Nishimura, Kosuke Nagashio, and Akira Toriumi
Affiliation: The University of Tokyo
2012
Recipient: Rui Zhang
Paper: High Mobility Ge pMOSFETs with 0.7 nm Ultrathin EOT using HfO2/Al2O3/GeOx/Ge Gate Stacks Fabricated by Plasma Post Oxidation
Authors: Rui Zhang, Po-Chin Huang, Noriyuki Taoka, Mitsuru Takenaka and Shinichi Takagi
Affiliation: The University of Tokyo
2011
Recipient: Jiale Liang
Paper: A 1.4μA Reset Current Phase Change Memory Cell with Integrated Carbon Nanotube Electrodes for Cross-Point Memory Application
Authors: Jiale Liang, Rakesh Gnana David Jeyasingh, Hong-Yu Chen, and H. -S. Philip Wong
Affiliation: Stanford University
2010
Recipient: Laurent Brunet
Paper: New Insight on VT stability of HK/MG stacks with scaling in 30nm FDSOI technology
Authors: Laurent. Brunet*+, X. Garros, M. Cassé, O. Weber, F. Andrieu, C. Fenouillet-Béranger, P. Perreau, F. Martin, M. Charbonnier, D. Lafond, C. Gaumer*, S. Lhostis*, V. Vidal, L. Brévard, L. Tosti, S. Denorme*, S. Barnola, J.F. Damlencourt, V. Loup, G. Reimbold, F. Boulanger, O. Faynot, A. Bravaix
Affiliation: 1CEA-LETI, * STMicroelectronics, +IM2NP
2009
Recipient: Gregory Bidal
Paper: High velocity Si-nanodot: a candidate for SRAM applications at 16nm node and below
Authors: Gregory Bidal1,2, Frederic Boeuf1, Stephane Denorme1, Nicolas Loubet1, Jean Luc Huguenin1,2, Pierre Perreau3, Dominique Fleury1,2, François Leverd1, Sebastien Lagrasta1, Sebastien Barnola3, Thierry Salvetat3, Bastien Orlando1, Remi Beneyton1, Laurent Clement1, Roland Pantel1, Stephane Monfray1, Gerard Ghibaudo2 and Thomas Skotnicki1
Affiliation: 1STMicroelectronics, 2IMEP, Minatec INPG, 3CEA-LETI/Minatec
2008
Recipient: Nishant Patil and Albert Lin
Paper: Integrated Wafer-Scale Growth and Transfer of Directional Carbon Nanotubes and Misaligned-Carbon-Nanotube-Immune Logic Structures
Authors: Nishant Patil, Albert Lin, Edward R. Myers, H.-S. Philip Wong, and Subhasish Mitra
Affiliation: Stanford University
2007
Recipient: Mohan V. Dunga
Paper: BSIM-MG: A Versatile Multi-Gate FET Model for Mixed-Signal Design
Authors: Mohan V. Dunga1, Chung-Hsun Lin1, Darsen D. Lu1, Weize Xiong2, C. R. Cleavelin2, P. Patruno3, Jiunn-Ren Hwang4, Fu-Liang Yang4, Ali M. Niknejad1 and Chenming Hu1
Affiliation: 1University of California, Berkeley, 2Texas Instruments Inc., 3SOITECH, 4Taiwan Semiconductor Manufacturing Company (TSMC)
2006
Recipient: Hyunjin Lee
Paper: Sub-5nm All-Around Gate FinFET for Ultimate Scaling
Authors: Hyunjin Lee, Lee-Eun Yu, Seong-Wan Ryu, Jin-Woo Han, Kanghoon Jeon, Dong-Yoon Jang, Kuk-Hwan Kim, Jiye Lee, Ju-Hyun Kim, Sang Cheol Jeon*, Gi Seong Lee*, Jae Sub Oh*, Yun Chang Park*, Woo Ho Bae*, Hee Mok Lee*, Jun Mo Yang*, Jung Jae Yoo*, Sang Ik Kim* and Yang-Kyu Choi
Affiliation: Korea Advanced Institute of Science and Technology, *Korean National Nanofab Center
2005
Recipient: Chien-Tai Chan
Paper: Investigation of Post-NBTI Stress Recovery in pMOSFETs by Direct Measurement of Single Oxide Charge De-Trapping
Authors: Chien-Tai Chan, Huan-Chi Ma, Chun-Jung Tang and Tahui Wang
Affiliation: National Chiao-Tung University
2004
Recipient: Sunjung Kim
Paper: Engineering of Voltage Nonlinearity in High-K MIM Capacitor for Analog/Mixed-Signal ICs
Authors: Sunjung Kim1, Byung Jin Cho1, Ming-Fu li1,2, Shi-Jin Ding1, Ming Bin Yu2, Chunxiang Zhu1, Albert Chin3, and Dim-Lee Kwong4
Affiliation: 1National University of Singapore, 2Institute of Microelectronics (IME), Singapore, 3National Chiao Tung University, 4University of Texas, Austin