Former Best Student Paper Award Winners – Symposium on VLSI Technology
- Home
- Best Student Paper Award
- Former Best Student Paper Award Winners – Symposium on VLSI Technology
2015
- Recipient:
- Cimang Lu
- Paper:
- Design and Demonstration of Reliability-Aware Ge Gate Stacks with 0.5 nm EOT
- Authors:
- Cimang Lu, Choong Hyun Lee, Tomonori Nishimura and Akira Toriumi
- Affiliation:
- The University of Tokyo, JST-CREST
2014
- Recipient:
- Heng Wu
- Paper:
- Ge CMOS: Breakthroughs of nFETs ( Imax= 714 mA/mm, gmax= 590 mS/mm) by Recessed Channel and S/D
- Authors:
- Heng Wu, Mengwei Si, Lin Dong, Jingyun Zhang, Peide Ye
- Affiliation:
- Purdue University
2013
- Recipient:
- ChoongHyun Lee
- Paper:
- Enhancement of High-Ns Electron Mobility in Sub-nm EOT Ge n-MOSFETs
- Authors:
- ChoongHyun Lee, Cimang Lu, Toshiyuki Tabata, Tomonori Nishimura, Kosuke Nagashio, and Akira Toriumi
- Affiliation:
- The University of Tokyo
2012
- Recipient:
- Rui Zhang
- Paper:
- High Mobility Ge pMOSFETs with 0.7 nm Ultrathin EOT using HfO2/Al2O3/GeOx/Ge Gate Stacks Fabricated by Plasma Post Oxidation
- Authors:
- Rui Zhang, Po-Chin Huang, Noriyuki Taoka, Mitsuru Takenaka and Shinichi Takagi
- Affiliation:
- The University of Tokyo
2011
- Recipient:
- Jiale Liang
- Paper:
- A 1.4μA Reset Current Phase Change Memory Cell with Integrated Carbon Nanotube Electrodes for Cross-Point Memory Application
- Authors:
- Jiale Liang, Rakesh Gnana David Jeyasingh, Hong-Yu Chen, and H. -S. Philip Wong
- Affiliation:
- Stanford University
2010
- Recipient:
- Laurent Brunet
- Paper:
- New Insight on VT stability of HK/MG stacks with scaling in 30nm FDSOI technology
- Authors:
- Laurent. Brunet*+, X. Garros, M. Cassé, O. Weber, F. Andrieu, C. Fenouillet-Béranger, P. Perreau, F. Martin, M. Charbonnier, D. Lafond, C. Gaumer*, S. Lhostis*, V. Vidal, L. Brévard, L. Tosti, S. Denorme*, S. Barnola, J.F. Damlencourt, V. Loup, G. Reimbold, F. Boulanger, O. Faynot, A. Bravaix
- Affiliation:
- 1CEA-LETI, * STMicroelectronics, +IM2NP
2009
- Recipient:
- Gregory Bidal
- Paper:
- High velocity Si-nanodot: a candidate for SRAM applications at 16nm node and below
- Authors:
- Gregory Bidal1,2, Frederic Boeuf1, Stephane Denorme1, Nicolas Loubet1, Jean Luc Huguenin1,2, Pierre Perreau3, Dominique Fleury1,2, François Leverd1, Sebastien Lagrasta1, Sebastien Barnola3, Thierry Salvetat3, Bastien Orlando1, Remi Beneyton1, Laurent Clement1, Roland Pantel1, Stephane Monfray1, Gerard Ghibaudo2 and Thomas Skotnicki1
- Affiliation:
- 1STMicroelectronics, 2IMEP, Minatec INPG, 3CEA-LETI/Minatec
2008
Nishant Patil
Albert Lin
- Recipient:
- Nishant Patil and Albert Lin
- Paper:
- Integrated Wafer-Scale Growth and Transfer of Directional Carbon Nanotubes and Misaligned-Carbon-Nanotube-Immune Logic Structures
- Authors:
- Nishant Patil, Albert Lin, Edward R. Myers, H.-S. Philip Wong, and Subhasish Mitra
- Affiliation:
- Stanford University
2007
- Recipient:
- Mohan V. Dunga
- Paper:
- BSIM-MG: A Versatile Multi-Gate FET Model for Mixed-Signal Design
- Authors:
- Mohan V. Dunga1, Chung-Hsun Lin1, Darsen D. Lu1, Weize Xiong2, C. R. Cleavelin2, P. Patruno3, Jiunn-Ren Hwang4, Fu-Liang Yang4, Ali M. Niknejad1 and Chenming Hu1
- Affiliation:
- 1University of California, Berkeley, 2Texas Instruments Inc., 3SOITECH, 4Taiwan Semiconductor Manufacturing Company (TSMC)
2006
- Recipient:
- Hyunjin Lee
- Paper:
- Sub-5nm All-Around Gate FinFET for Ultimate Scaling
- Authors:
- Hyunjin Lee, Lee-Eun Yu, Seong-Wan Ryu, Jin-Woo Han, Kanghoon Jeon, Dong-Yoon Jang, Kuk-Hwan Kim, Jiye Lee, Ju-Hyun Kim, Sang Cheol Jeon*, Gi Seong Lee*, Jae Sub Oh*, Yun Chang Park*, Woo Ho Bae*, Hee Mok Lee*, Jun Mo Yang*, Jung Jae Yoo*, Sang Ik Kim* and Yang-Kyu Choi
- Affiliation:
- Korea Advanced Institute of Science and Technology, *Korean National Nanofab Center
2005
- Recipient:
- Chien-Tai Chan
- Paper:
- Investigation of Post-NBTI Stress Recovery in pMOSFETs by Direct Measurement of Single Oxide Charge De-Trapping
- Authors:
- Chien-Tai Chan, Huan-Chi Ma, Chun-Jung Tang and Tahui Wang
- Affiliation:
- National Chiao-Tung University
2004
- Recipient:
- Sunjung Kim
- Paper:
- Engineering of Voltage Nonlinearity in High-K MIM Capacitor for Analog/Mixed-Signal ICs
- Authors:
- Sunjung Kim1, Byung Jin Cho1, Ming-Fu li1,2, Shi-Jin Ding1, Ming Bin Yu2, Chunxiang Zhu1, Albert Chin3, and Dim-Lee Kwong4
- Affiliation:
- 1National University of Singapore, 2Institute of Microelectronics (IME), Singapore, 3National Chiao Tung University, 4University of Texas, Austin