Best Student Paper Award
Requirements for 2019 Symposia on VLSI Technology and Circuits Best Student Paper Award
Both the Symposium on VLSI Technology and the Symposium on VLSI Circuits recognize outstanding student papers with a Best Student Paper Award. The awards were established in 2004 to promote student research and support the development of future leaders in the fields of VLSI Technology and VLSI Circuits. Award recipients are selected based on the quality of their written papers and the quality of their presentations at the Symposia. Award recipients receive a monetary prize and certificate, presented at the opening session of the Symposium held in the following year. Award recipients’ travel expenses and registration fees for the Symposium held in the following year are covered by the Symposia. Candidates for the awards must be enrolled as full-time students at the time of paper submission, must be the leading author and the presenter of their papers, and must indicate at submission that their papers should be considered for the award.
VLSI BSPA Verification Form
As a candidate for VLSI BSPA, student author needs to fill out “Verification Form for VLSI Student Paper”
including Professor/Industrial supervisor sign.
Then it is needed to be scanned and uploaded to Online Submission System upon your paper
submission.
Former Best Student Paper Award Winners
Past Technology Paper Winners
- 2017
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Recipient: Dian Lei
Authors: Dian Lei1, Kwang Hong Lee2, Shuyu Bao2,3, Wei Wang1, Saeid Masudy-Panah1, Sachin Yadav1, Annie Kumar1, Yuan Dong1, Yuye Kang1, Shengqiang Xu1, Ying Wu1, Yi-Chiau Huang4, Hua Chung4, Schubert S. Chu4, Satheesh Kuppurao4, Chuan Seng Tan2,3, Xiao Gong1 and Yee-Chia Yeo1
Affiliation: 1National University of Singapore, 2Singapore MIT Alliance for Research and Technology, 3Nanyang Technological University, 4Applied Materials
- 2016
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Recipient: Lukas Czornomaz
Authors: L. Czornomaz, V. Djara, V. Deshpande, E. O’Connor, M. Sousa, D. Caimi, K. Cheng*, J. Fompeyrine
Affiliation: IBM Research GmbH Zürich Laboratory, *IBM Research
- 2015
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Recipient: Cimang Lu
Paper:Design and Demonstration of Reliability-Aware Ge Gate Stacks with 0.5 nm EOT
Authors: Cimang Lu, Choong Hyun Lee, Tomonori Nishimura and Akira Toriumi
Affiliation:The University of Tokyo, JST-CREST
- 2014
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Recipient: Heng Wu
Paper: Ge CMOS: Breakthroughs of nFETs ( Imax= 714 mA/mm, gmax= 590 mS/mm) by Recessed Channel and S/D
Authors: Heng Wu, Mengwei Si, Lin Dong, Jingyun Zhang, Peide Ye
Affiliation: Purdue University
- 2013
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Recipient: ChoongHyun Lee
Paper: Enhancement of High-Ns Electron Mobility in Sub-nm EOT Ge n-MOSFETs
Authors: ChoongHyun Lee, Cimang Lu, Toshiyuki Tabata, Tomonori Nishimura, Kosuke Nagashio, and Akira Toriumi
Affiliation: The University of Tokyo
- 2012
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Recipient: Rui Zhang
Authors: Rui Zhang, Po-Chin Huang, Noriyuki Taoka, Mitsuru Takenaka and Shinichi Takagi
Affiliation: The University of Tokyo
- 2011
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Recipient: Jiale Liang
Authors: Jiale Liang, Rakesh Gnana David Jeyasingh, Hong-Yu Chen, and H. -S. Philip Wong
Affiliation: Stanford University
- 2010
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Recipient: Laurent Brunet
Paper: New Insight on VT stability of HK/MG stacks with scaling in 30nm FDSOI technology
Authors: Laurent. Brunet*+, X. Garros, M. Cassé, O. Weber, F. Andrieu, C. Fenouillet-Béranger, P. Perreau, F. Martin, M. Charbonnier, D. Lafond, C. Gaumer*, S. Lhostis*, V. Vidal, L. Brévard, L. Tosti, S. Denorme*, S. Barnola, J.F. Damlencourt, V. Loup, G. Reimbold, F. Boulanger, O. Faynot, A. Bravaix
Affiliation: 1CEA-LETI, * STMicroelectronics, +IM2NP
- 2009
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Recipient: Gregory Bidal
Paper: High velocity Si-nanodot: a candidate for SRAM applications at 16nm node and below
Authors: Gregory Bidal1,2, Frederic Boeuf1, Stephane Denorme1, Nicolas Loubet1, Jean Luc Huguenin1,2, Pierre Perreau3, Dominique Fleury1,2, François Leverd1, Sebastien Lagrasta1, Sebastien Barnola3, Thierry Salvetat3, Bastien Orlando1, Remi Beneyton1, Laurent Clement1, Roland Pantel1, Stephane Monfray1, Gerard Ghibaudo2 and Thomas Skotnicki1
Affiliation: 1STMicroelectronics, 2IMEP, Minatec INPG, 3CEA-LETI/Minatec
- 2008
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Recipient: Nishant Patil and Albert Lin
Authors: Nishant Patil, Albert Lin, Edward R. Myers, H.-S. Philip Wong, and Subhasish Mitra
Affiliation: Stanford University
- 2007
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Recipient: Mohan V. Dunga
Paper: BSIM-MG: A Versatile Multi-Gate FET Model for Mixed-Signal Design
Authors: Mohan V. Dunga1, Chung-Hsun Lin1, Darsen D. Lu1, Weize Xiong2, C. R. Cleavelin2, P. Patruno3, Jiunn-Ren Hwang4, Fu-Liang Yang4, Ali M. Niknejad1 and Chenming Hu1
Affiliation: 1University of California, Berkeley, 2Texas Instruments Inc., 3SOITECH, 4Taiwan Semiconductor Manufacturing Company (TSMC)
- 2006
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Recipient: Hyunjin Lee
Paper: Sub-5nm All-Around Gate FinFET for Ultimate Scaling
Authors: Hyunjin Lee, Lee-Eun Yu, Seong-Wan Ryu, Jin-Woo Han, Kanghoon Jeon, Dong-Yoon Jang, Kuk-Hwan Kim, Jiye Lee, Ju-Hyun Kim, Sang Cheol Jeon*, Gi Seong Lee*, Jae Sub Oh*, Yun Chang Park*, Woo Ho Bae*, Hee Mok Lee*, Jun Mo Yang*, Jung Jae Yoo*, Sang Ik Kim* and Yang-Kyu Choi
Affiliation: Korea Advanced Institute of Science and Technology, *Korean National Nanofab Center
- 2005
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Recipient: Chien-Tai Chan
Authors: Chien-Tai Chan, Huan-Chi Ma, Chun-Jung Tang and Tahui Wang
Affiliation: National Chiao-Tung University
- 2004
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Recipient: Sunjung Kim
Paper: Engineering of Voltage Nonlinearity in High-K MIM Capacitor for Analog/Mixed-Signal ICs
Authors: Sunjung Kim1, Byung Jin Cho1, Ming-Fu li1,2, Shi-Jin Ding1, Ming Bin Yu2, Chunxiang Zhu1, Albert Chin3, and Dim-Lee Kwong4
Affiliation: 1National University of Singapore, 2Institute of Microelectronics (IME), Singapore, 3National Chiao Tung University, 4University of Texas, Austin
VLSI Technology Technical Program Committee
Chair Shinya Yamakawa
Co-Chair Tomas Palacios