Best Student Paper Award

Recipient: Lukas Czornomaz

Paper:First Demonstration of InGaAs/SiGe CMOS Inverters and Dense SRAM Arrays on Si Using Selective Epitaxy and Standard FEOL Processes

Authors: L. Czornomaz, V. Djara, V. Deshpande, E. O’Connor, M. Sousa, D. Caimi, K. Cheng*, J. Fompeyrine

Affiliation: IBM Research GmbH Zürich Laboratory, *IBM Research

Recipient: Cimang Lu

Paper:Design and Demonstration of Reliability-Aware Ge Gate Stacks with 0.5 nm EOT

Authors: Cimang Lu, Choong Hyun Lee, Tomonori Nishimura and Akira Toriumi

Affiliation:The University of Tokyo, JST-CREST

Recipient: Heng Wu

Paper: Ge CMOS: Breakthroughs of nFETs ( Imax= 714 mA/mm, gmax= 590 mS/mm) by Recessed Channel and S/D

Authors: Heng Wu, Mengwei Si, Lin Dong, Jingyun Zhang, Peide Ye

Affiliation: Purdue University

Recipient: ChoongHyun Lee

Paper: Enhancement of High-Ns Electron Mobility in Sub-nm EOT Ge n-MOSFETs

Authors: ChoongHyun Lee, Cimang Lu, Toshiyuki Tabata, Tomonori Nishimura, Kosuke Nagashio, and Akira Toriumi

Affiliation: The University of Tokyo

Recipient: Rui Zhang

Paper: High Mobility Ge pMOSFETs with 0.7 nm Ultrathin EOT using HfO₂/Al₂O₃/GeOx/Ge Gate Stacks Fabricated by Plasma Post Oxidation

Authors: Rui Zhang, Po-Chin Huang, Noriyuki Taoka, Mitsuru Takenaka and Shinichi Takagi

Affiliation: The University of Tokyo

Recipient: Jiale Liang

Paper: A 1.4μA Reset Current Phase Change Memory Cell with Integrated Carbon Nanotube Electrodes for Cross-Point Memory Application

Authors: Jiale Liang, Rakesh Gnana David Jeyasingh, Hong-Yu Chen, and H. -S. Philip Wong

Affiliation: Stanford University

Recipient: Laurent Brunet

Paper: New Insight on VT stability of HK/MG stacks with scaling in 30nm FDSOI technology

Authors: Laurent. Brunet*+, X. Garros, M. Cassé, O. Weber, F. Andrieu, C. Fenouillet-Béranger, P. Perreau, F. Martin, M. Charbonnier, D. Lafond, C. Gaumer*, S. Lhostis*, V. Vidal, L. Brévard, L. Tosti, S. Denorme*, S. Barnola, J.F. Damlencourt, V. Loup, G. Reimbold, F. Boulanger, O. Faynot, A. Bravaix

Affiliation: ¹CEA-LETI, * STMicroelectronics, +IM2NP

Recipient: Gregory Bidal

Paper: High velocity Si-nanodot: a candidate for SRAM applications at 16nm node and below

Authors: Gregory Bidal^1,2, Frederic Boeuf¹, Stephane Denorme¹, Nicolas Loubet¹, Jean Luc Huguenin^1,2, Pierre Perreau³, Dominique Fleury^1,2, François Leverd¹, Sebastien Lagrasta¹, Sebastien Barnola³, Thierry Salvetat³, Bastien Orlando¹, Remi Beneyton¹, Laurent Clement¹, Roland Pantel¹, Stephane Monfray¹, Gerard Ghibaudo² and Thomas Skotnicki¹

Affiliation: ¹STMicroelectronics, ²IMEP, Minatec INPG, ³CEA-LETI/Minatec

Recipient: Nishant Patil and Albert Lin

Paper: Integrated Wafer-Scale Growth and Transfer of Directional Carbon Nanotubes and Misaligned-Carbon-Nanotube-Immune Logic Structures

Authors: Nishant Patil, Albert Lin, Edward R. Myers, H.-S. Philip Wong, and Subhasish Mitra

Affiliation: Stanford University

Recipient: Mohan V. Dunga

Paper: BSIM-MG: A Versatile Multi-Gate FET Model for Mixed-Signal Design

Authors: Mohan V. Dunga¹, Chung-Hsun Lin¹, Darsen D. Lu¹, Weize Xiong², C. R. Cleavelin², P. Patruno³, Jiunn-Ren Hwang⁴, Fu-Liang Yang⁴, Ali M. Niknejad¹ and Chenming Hu¹

Affiliation: ¹University of California, Berkeley, ²Texas Instruments Inc., ³SOITECH, ⁴Taiwan Semiconductor Manufacturing Company (TSMC)

Recipient: Hyunjin Lee

Paper: Sub-5nm All-Around Gate FinFET for Ultimate Scaling

Authors: Hyunjin Lee, Lee-Eun Yu, Seong-Wan Ryu, Jin-Woo Han, Kanghoon Jeon, Dong-Yoon Jang, Kuk-Hwan Kim, Jiye Lee, Ju-Hyun Kim, Sang Cheol Jeon*, Gi Seong Lee*, Jae Sub Oh*, Yun Chang Park*, Woo Ho Bae*, Hee Mok Lee*, Jun Mo Yang*, Jung Jae Yoo*, Sang Ik Kim* and Yang-Kyu Choi

Affiliation: Korea Advanced Institute of Science and Technology, *Korean National Nanofab Center

Recipient: Chien-Tai Chan

Paper: Investigation of Post-NBTI Stress Recovery in pMOSFETs by Direct Measurement of Single Oxide Charge De-Trapping

Authors: Chien-Tai Chan, Huan-Chi Ma, Chun-Jung Tang and Tahui Wang

Affiliation: National Chiao-Tung University

Recipient: Sunjung Kim

Paper: Engineering of Voltage Nonlinearity in High-K MIM Capacitor for Analog/Mixed-Signal ICs

Authors: Sunjung Kim¹, Byung Jin Cho¹, Ming-Fu li^1,2, Shi-Jin Ding¹, Ming Bin Yu², Chunxiang Zhu¹, Albert Chin³, and Dim-Lee Kwong⁴

Affiliation: ¹National University of Singapore, ²Institute of Microelectronics (IME), Singapore, ³National Chiao Tung University, ⁴University of Texas, Austin

Recipient: Bahman Yousefzadeh

Paper: A BJT-based Temperature-to-Digital Converter With ±60 mK (3 σ) Inaccuracy From −55 °C to +125 °C in 0.16-μm CMOS

Authors: Bahman Yousefzadeh, Saleh Heidary Shalmany, Kofi A. A. Makinwa

Affiliation: Delft University of Technology

Recipient: Abishek Manian

Paper: A 40-Gb/s 9.2-mW CMOS Equalizer

Authors: A. Manian and B. Razavi

Affiliation: University of California, Los Angeles

Recipient: Maryam Tabesh

Paper: A Power-Harvesting Pad-Less mm-Sized 24/60GHz Passive Radio with On-Chip Antennas

Authors: Maryam Tabesh, Mustafa Rangwala*, Ali M. Niknejad and Amin Arbabian*

Affiliation: University of California, Berkeley and *Stanford University

Recipient: Yingzhe Hu

Paper: A Fully Self-Powered Hybrid System Based on CMOS ICs and Large-Area Electronics for Large-Scale Strain Monitoring

Authors:Yingzhe Hu, Liechao Huang, Josue Sanz Robinson, Warren Rieutort-Louis, Sigurd Wanger, James C. Sturm, Naveen Verma

Affiliation: Princeton University, USA

Recipient: Jun Won Jung

Paper: A 25-Gb/s 5-mW CMOS CDR/Deserializer

Authors: Jun Won Jung and Behzad Razavi

Affiliation: University of California, Los Angeles, CA, USA

Recipient: Chintan Thakkar

Paper: A 10Gb/s 45mW Adaptive 60GHz Baseband in 65nm CMOS

Authors: Chintan Thakkar¹, Lingkai Kong¹, Kwangmo Jung¹, Antoine Frappé², and Elad Alon¹

Affiliation: ¹University of California, Berkeley, USA & ²Institut Supérieur de l’Electronique et du Numérique, France

Recipient: Dajiang Zhou

Paper: A 530Mpixels/s 4096×2160@60fps H.264/AVC High Profile Video Decoder Chip

Authors: Dajiang Zhou¹, Jinjia Zhou¹, Xun He¹, Ji Kong², Jiayi Zhu², Peilin Liu², and Satoshi Goto¹

Affiliation: ¹Waseda University, Japan & ²Shanghai Jiao Tong University, China

Recipient: Zhengya Zhang

Paper: A 47 Gb/s LDPC Decoder with Improved Low Error Rate Performance

Authors: Zhengya Zhang, Venkat Anantharam, Martin J. Wainwright, Borivoje Nikolic

Affiliation: University of California, Berkeley, USA

Recipient: Jason Hu

Paper: A 9.4-bit, 50-MS/s, 1.44-mW Pipelined ADC using Dynamic Residue Amplification

Authors: Jason Hu, Noam Dolev and Boris Murmann

Affiliation: Stanford University, USA

Recipient: Minjae Lee

Paper: A 9b, 1.25ps Resolution Coarse-Fine Time-to- Digital Converter in 90nm CMOS that Amplifies a Time Residue

Authors: Minjae Lee and Asad A. Abidi

Affiliation: University of California, Los Angeles, USA

Recipient: Koon-Lun Jackie Wong

Paper: A 5-mW 6-Gb/s Quarter-Rate Sampling receiver with a 2-Tap DFE Using Soft Decisions

Authors: Koon-Lun Jackie Wong¹, Alexander Rylyakov², and Chih-Kong Ken Yang¹

Affiliation: ¹University of California, Los Angeles, USA & ²IBM T. J. Watson Research Center, USA

Recipient: Antonio Liscidini

Paper: A 0.13 um CMOS Front-End for DCS1800/UMTS/ 802.11b-g with Multi-band Positive Feedback Low Noise Amplifier

Authors: Antonio Liscidini, Massimo Brandolini, Davide Sanzogni, and Rinaldo Castello

Affiliation: University of Pavia, Italy

Recipient: Timothy O. Dickson

Paper: A 2.5-V, 40-Gb/s Decision Circuit Using SiGe BiCMOS Logic

Authors: Timothy O. Dickson¹, Rudy Beerkens², and Sorin P. Voinigescu¹

Affiliation: ¹University of Toronto, Canada & ²STMicroelectonics, Canada