2023 Symposium on
VLSI Technology and Circuits

Past Technology Paper Winners

2022

Recipient: Asir Intisar Khan

Paper: First Demonstration of Ge2Sb2Te5-Based Superlattice Phase Change Memory with Low Reset Current Density(~3 MA/cm²) and Low Resistance Drift (~0.002 at 105℃)

Authors:  Asir Intisar Khan*, Christopher Perez*, Xiangjin Wu*, Byoungjun Won**, Kangsik Kim***, Heungdong Kwon*, Pranav Ramesh*, Kathryn M. Neilson*, Mehdi Asheghi*, Krishna Saraswat*, Zonghoon Lee***, Il-Kwon Oh**, H.-S. Philip Wong*, Kenneth E. Goodson*, Eric Pop*

Affiliation: *Stanford University, Stanford, USA, **Ajou University, South Korea, ***Ulsan National Institute of Science & Tech., South Korea

2021

Recipient: Kaizhen Han

Paper: First Demonstration of Oxide Semiconductor Nanowire Transistors: a Novel Digital Etch Technique, IGZO Channel, Nanowire Width Down to ~20 nm, and Ion Exceeding 1300μA/μm

Authors: K. Han, Q. Kong, Y. Kang, C. Sun, C. Wang, J. Zhang, H. Xu, S.Samanta, J. Zhou, H. Wang, V.-Y. Thean and X. Gong

Affiliation: National University of Singapore (NUS), Singapore

2020

Recipient: Wriddhi Chakraborty

Paper: BEOL Compatible Dual-Gate Ultra Thin-Body W-Doped Indium-Oxide Transistor with I_on = 370 μA/um, SS = 73 mV/dec and I_on/I_off ratio > 4x10⁹

Authors: W. Chakarborty*, B. Grisafe*, H. Ye*, I. Lightcap*, K. Ni** and S. Datta*

Affiliation: *University of Notre Dame and **Rochester Institute of Technology, USA

2019

Recipient: Stefano Bianchi

Paper: Energy-Efficient Continual Learning in Hybrid Supervised-Unsupervised Neural Networks with PCM Synapses

Authors: S. Bianchi*, I. Muñoz-Martin*, G. Pedretti*, O. Melnic*, S. Ambrogio** and D. Ielmini*

Affiliation: *Politecnico di Milano, Italy and **IBM Research, USA

2018

Recipient: Naga Sruti Avasarala

Paper: Half-threshold bias Ioff reduction down to nA range of thermally and electrically stable high-performance integrated OTS selector, obtained by Se enrichment and N-doping of thin GeSe layers

Authors: N. Avasarala, G.L. Donadio, T. Witters, K. Opsomer, B. Govoreanu, A. Fantini, S. Clima, H. Oh, S. Kundu, W. Devulder, M.H. van der Veen, J. Van Houdt, M. Heyns, L. Goux and G. S. Kar

Affiliation: imec and KU Leuven, Belgium

2017

Recipient: Dian Lei

Paper:The First GeSn FinFET on a Novel GeSnOI Substrate Achieving Lowest S of 79 mV/decade and Record High G_m,int of 807 μS/μm for GeSn P-FETs

Authors: Dian Lei¹, Kwang Hong Lee², Shuyu Bao^2,3, Wei Wang1, Saeid Masudy-Panah¹, Sachin Yadav¹, Annie Kumar¹, Yuan Dong¹, Yuye Kang¹, Shengqiang Xu¹, Ying Wu¹, Yi-Chiau Huang⁴, Hua Chung⁴, Schubert S. Chu⁴, Satheesh Kuppurao⁴, Chuan Seng Tan^2,3, Xiao Gong¹ and Yee-Chia Yeo¹

Affiliation: ¹National University of Singapore, ²Singapore MIT Alliance for Research and Technology, ³Nanyang Technological University, ⁴Applied Materials

2016

Recipient: Lukas Czornomaz

Paper:First Demonstration of InGaAs/SiGe CMOS Inverters and Dense SRAM Arrays on Si Using Selective Epitaxy and Standard FEOL Processes

Authors: L. Czornomaz, V. Djara, V. Deshpande, E. O’Connor, M. Sousa, D. Caimi, K. Cheng*, J. Fompeyrine

Affiliation: IBM Research GmbH Zürich Laboratory, *IBM Research

2015

Recipient: Cimang Lu

Paper:Design and Demonstration of Reliability-Aware Ge Gate Stacks with 0.5 nm EOT

Authors: Cimang Lu, Choong Hyun Lee, Tomonori Nishimura and Akira Toriumi

Affiliation:The University of Tokyo, JST-CREST

2014

Recipient: Heng Wu

Paper: Ge CMOS: Breakthroughs of nFETs ( Imax= 714 mA/mm, gmax= 590 mS/mm) by Recessed Channel and S/D

Authors: Heng Wu, Mengwei Si, Lin Dong, Jingyun Zhang, Peide Ye

Affiliation: Purdue University

2013

Recipient: ChoongHyun Lee

Paper: Enhancement of High-Ns Electron Mobility in Sub-nm EOT Ge n-MOSFETs

Authors: ChoongHyun Lee, Cimang Lu, Toshiyuki Tabata, Tomonori Nishimura, Kosuke Nagashio, and Akira Toriumi

Affiliation: The University of Tokyo

2012

Recipient: Rui Zhang

Paper: High Mobility Ge pMOSFETs with 0.7 nm Ultrathin EOT using HfO₂/Al₂O₃/GeOx/Ge Gate Stacks Fabricated by Plasma Post Oxidation

Authors: Rui Zhang, Po-Chin Huang, Noriyuki Taoka, Mitsuru Takenaka and Shinichi Takagi

Affiliation: The University of Tokyo

2011

Recipient: Jiale Liang

Paper: A 1.4μA Reset Current Phase Change Memory Cell with Integrated Carbon Nanotube Electrodes for Cross-Point Memory Application

Authors: Jiale Liang, Rakesh Gnana David Jeyasingh, Hong-Yu Chen, and H. -S. Philip Wong

Affiliation: Stanford University

2010

Recipient: Laurent Brunet

Paper: New Insight on VT stability of HK/MG stacks with scaling in 30nm FDSOI technology

Authors: Laurent. Brunet*+, X. Garros, M. Cassé, O. Weber, F. Andrieu, C. Fenouillet-Béranger, P. Perreau, F. Martin, M. Charbonnier, D. Lafond, C. Gaumer*, S. Lhostis*, V. Vidal, L. Brévard, L. Tosti, S. Denorme*, S. Barnola, J.F. Damlencourt, V. Loup, G. Reimbold, F. Boulanger, O. Faynot, A. Bravaix

Affiliation: ¹CEA-LETI, * STMicroelectronics, +IM2NP

2009

Recipient: Gregory Bidal

Paper: High velocity Si-nanodot: a candidate for SRAM applications at 16nm node and below

Authors: Gregory Bidal^1,2, Frederic Boeuf¹, Stephane Denorme¹, Nicolas Loubet¹, Jean Luc Huguenin^1,2, Pierre Perreau³, Dominique Fleury^1,2, François Leverd¹, Sebastien Lagrasta¹, Sebastien Barnola³, Thierry Salvetat³, Bastien Orlando¹, Remi Beneyton¹, Laurent Clement¹, Roland Pantel¹, Stephane Monfray¹, Gerard Ghibaudo² and Thomas Skotnicki¹

Affiliation: ¹STMicroelectronics, ²IMEP, Minatec INPG, ³CEA-LETI/Minatec

2008

Recipient: Nishant Patil and Albert Lin

Paper: Integrated Wafer-Scale Growth and Transfer of Directional Carbon Nanotubes and Misaligned-Carbon-Nanotube-Immune Logic Structures

Authors: Nishant Patil, Albert Lin, Edward R. Myers, H.-S. Philip Wong, and Subhasish Mitra

Affiliation: Stanford University

2007

Recipient: Mohan V. Dunga

Paper: BSIM-MG: A Versatile Multi-Gate FET Model for Mixed-Signal Design

Authors: Mohan V. Dunga¹, Chung-Hsun Lin¹, Darsen D. Lu¹, Weize Xiong², C. R. Cleavelin², P. Patruno³, Jiunn-Ren Hwang⁴, Fu-Liang Yang⁴, Ali M. Niknejad¹ and Chenming Hu¹

Affiliation: ¹University of California, Berkeley, ²Texas Instruments Inc., ³SOITECH, ⁴Taiwan Semiconductor Manufacturing Company (TSMC)

2006

Recipient: Hyunjin Lee

Paper: Sub-5nm All-Around Gate FinFET for Ultimate Scaling

Authors: Hyunjin Lee, Lee-Eun Yu, Seong-Wan Ryu, Jin-Woo Han, Kanghoon Jeon, Dong-Yoon Jang, Kuk-Hwan Kim, Jiye Lee, Ju-Hyun Kim, Sang Cheol Jeon*, Gi Seong Lee*, Jae Sub Oh*, Yun Chang Park*, Woo Ho Bae*, Hee Mok Lee*, Jun Mo Yang*, Jung Jae Yoo*, Sang Ik Kim* and Yang-Kyu Choi

Affiliation: Korea Advanced Institute of Science and Technology, *Korean National Nanofab Center

2005

Recipient: Chien-Tai Chan

Paper: Investigation of Post-NBTI Stress Recovery in pMOSFETs by Direct Measurement of Single Oxide Charge De-Trapping

Authors: Chien-Tai Chan, Huan-Chi Ma, Chun-Jung Tang and Tahui Wang

Affiliation: National Chiao-Tung University

2004

Recipient: Sunjung Kim

Paper: Engineering of Voltage Nonlinearity in High-K MIM Capacitor for Analog/Mixed-Signal ICs

Authors: Sunjung Kim¹, Byung Jin Cho¹, Ming-Fu li^1,2, Shi-Jin Ding¹, Ming Bin Yu², Chunxiang Zhu¹, Albert Chin³, and Dim-Lee Kwong⁴

Affiliation: ¹National University of Singapore, ²Institute of Microelectronics (IME), Singapore, ³National Chiao Tung University, ⁴University of Texas, Austin