Welcome to the 2011 Symposium on VLSI Circuits
PDF of Advance Program (as of May 18)
Program Changes (as of June 8)
PDF of Abstracts
Technical program at a glance
You are cordially invited to attend the 2011 Symposium on VLSI Circuits, to be held on June 15-17th, 2011, at the Rihga Royal Hotel Kyoto in Kyoto, Japan. We are repeating last year’s successful two days’ overlap with the Technology Symposium to foster greater interactions and synergies between these two key conferences. This juxtaposition is a unique feature and value that distinguishes the Symposia from other conferences. The Symposium brings together experts and experienced engineers and scientists from industry and academia around the world to discuss present and future challenges in VLSI Circuits and Technology.
Preceding the Circuits Symposium, a one-day Short Course will be held on June 14th. This short course will focus on “Design Awareness in Circuit Design” where experts will give educational talks on this timely topic of challenges and solutions for VLSI circuit designs in scaled CMOS process technology nodes. On the same day, we also have a Workshop on “Bio Inspired Computation - What Electronics can Learn from Bio.” For a single Short Course/Workshop registration fee, attendees have access to either parallel session. On the 2nd day of the conference, a luncheon talk entitled “Recent Studies about Computer-Aided Origami Design” will entertain attendees with creative ideas of paper folding, from viewpoints of traditional folk art in Japan and computational sciences towards modern art.
This year, the technical program committee reviewed 409 papers and selected 115 papers for presentation covering a range of topics from Digital Circuits and Systems, Power Management, Memories, Analog, Data Converters, Wireless and Wireline Communications, Sensors, Bio and Medical Electronics. The traditional emphasis of the Symposium has been on paper quality. This year the committee has selected very high quality papers representing the scope of the Symposium. We have also invited four distinguished speakers to describe recent advances and new challenges in the areas of Space Science and Electronics, Medical and Healthcare Services, Computing, and Wireless Communication. To complement the plenary talks and papers, we have arranged two evening sessions on interesting and provocative topics to give you an opportunity to participate in the discussions and mix with the conference attendees. The evening sessions explore: “Non-Volatile Memory (NVM) Technology and New Application Opportunities” and “Will Circuit Design be a Key Issue in Biomedical Applications? (or Boring Circuits?)”. The rich technical content of the program will undoubtedly interest you, and we certainly hope that the Symposium will be a fruitful and enjoyable experience. This booklet contains the advance program together with forms for Symposium registration and hotel reservations. Please complete and return these forms or visit our website for online registration at http://www.vlsisymposium.org. Although on-site registration will be available at the conference, pre-registration will facilitate Symposium planning.
We look forward to meeting with you at the Symposium in Kyoto.
|
Makoto Nagata |
Vivek De |
Program Chair |
Program Co-Chair |
CONFERENCE SCHEDULE
Monday, June 13 |
7:30-17:00 |
Registration |
Tuesday, June 14 |
8:10-11:30 |
Short Course [Suzaku I] / Workshop [Suzaku III] |
11:30-13:15 |
Lunch |
13:15-17:30 |
Short Course [Suzaku I] / Workshop [Suzaku III] |
20:00-22:00 |
Joint Rump Session [Suzaku I, II] |
Wednesday, June 15 |
8:30-10:05 |
Session 1 |
Plenary Session I [Suzaku I, II] |
10:30-12:35 |
Session 2 |
Switching DC-DC Converters [Suzaku I] |
Session 3 |
Advanced Wireless Transceivers [Suzaku II] |
Session 4 |
Oversampling Converters [Suzaku III] |
12:35-13:55 |
Lunch |
13:55-16:00 |
Session 5 |
Circuit and System Integration [Suzaku I] |
Session 6 |
High Performance DACs and Amplifiers [Suzaku III] |
13:55-16:00 |
Highlights (Technology) [Shunju] |
16:10-17:50 |
Session 7 |
Embedded SRAM and Applications [Suzaku I] |
Session 8 |
Multi Gigabit Wireline Communication [Suzaku II] |
Session 9 |
Image Sensors [Suzaku III] |
19:00-21:00 |
Joint Coctail/Dinner Party |
Thursday, June 16 |
8:45-10:05 |
Session 10 |
Plenary Session II [Suzaku I, II] |
10:30-12:35 |
Session 11 |
Fractional-N PLLs [Suzaku I] (10:30-12:10) |
Session 12 |
Pipelined ADCs [Suzaku III] |
12:35-14:20 |
Lunch |
Luncheon Talk [Suzaku II] (12:45-14:05) |
14:20-16:00 |
Session 13 |
High Speed Digital for Interconnects [Suzaku I] |
Session 14 |
Bio Interfaces [Suzaku III] |
16:15-17:55 |
Session 15 |
Clocking Building Blocks [Suzaku I] |
Session 16 |
Ultra Low Power Transceivers [Suzaku II] |
Session 17 |
Bio Sensors and Applications [Suzaku III] |
20:00-22:00 |
Rump Sessions [Suzaku I, II, III] |
Friday, June 17 |
8:30-10:10 |
Session 18 |
High Performance Circuit Techniques [Suzaku I] |
Session 19 |
Nonvolatile Memories [Suzaku II] |
Session 20 |
High Speed and Low Power Receiver Techniques
[Suzaku III] |
10:30-12:35 |
Session 21 |
Device-Based Circuit Techniques [Suzaku I] |
Session 22 |
DRAM and Memory Interfaces [Suzaku II] (10:30-12:10) |
Session 23 |
Power Management for Energy Harvesting [Suzaku III] |
12:35-13:55 |
Lunch |
13:55-16:00 |
Session 24 |
Digital Processors [Suzaku I] |
Session 25 |
Emerging ADCs [Suzaku II] |
Session 26 |
Power Management Technique [Suzaku III] |
16:15-17:55 |
Session 27 |
Signal Processing for Wireline [Suzaku I] |
Session 28 |
Nonvolatile Memory Applications [Suzaku II] |
PROGRAM
Session 1 |
Welcome and Plenary Session I [Suzaku I, II] |
Chairpersons |
M. Nagata, Kobe Univ.
V. De, Intel Corp. |
8:30 |
1-1 |
Welcome and Opening Remarks |
Invited |
M. Mizuno, Renesas Electronics Corp.
A. Amerasekera, Texas Instruments, Inc. |
8:45 |
1-2 |
The Hayabusa Mission - Its Seven Years Flight |
Invited
Abstract |
J. Kawaguchi, Japan Aerospace Exploration Agency(JAXA), Japan |
9:25 |
1-3 |
The Swarm at the Edge of the Cloud - A New Perspective on Wireless |
Invited
Abstract |
J.M. Rabaey, University of California at Berkeley, USA |
Session 2 |
Switching DC-DC Converters [Suzaku I] |
Chairpersons |
C. Yoo, Hanyang Univ.
J. Savoj, Xilinx |
10:30 |
2-1 |
A 50.3ns Transient-Response CR-Free SIMO Power Converter with Adaptive Current Compensation |
Abstract |
Y. Zhang and D. Ma |
The University of Texas at Dallas, USA |
10:55 |
2-2 |
A 98% Cross-Talk Self-Cancellation Single-Inductor Dual-Output DC-DC Converter Using Bidirectional Power Prediction (BPP) Control in 65nm CMOS |
Abstract |
Y.-H. Lee*, Y.-Y.
Yang*, T.-C. Huang*, C.-Y. Hsieh*, K.-H. Chen*, Y.-K. Chen**,
C.-C. Huang** and Y.-H. Lin** |
*National Chiao Tung University
and **Realtek Semiconductor Corp., Taiwan |
11:20 |
2-3 |
A Single-Inductor 8-Channel Output DC-DC Boost
Converter with Time-Limited One-Shot Current Control
and Single Shared Hysteresis Comparator |
Abstract |
J. Kim, D. S.
Kim and C. Kim |
Korea University, Korea |
11:45 |
2-4 |
Fixed-Frequency Adaptive-On-Time Boost Converter with Fast Transient Response and Light Load Efficiency Enhancement by Auto-Frequency-Hopping |
Abstract |
X. Jing and P.K.T. Mok |
The Hong Kong University of Science and Technology, China |
12:10 |
2-5 |
A Spurious-Free Switching Buck Converter Using a
Delta-Sigma Modulation Controller with a Scalable
Sampling Frequency |
Abstract |
M.K. Alghamdi and A.A. Hamoui |
McGill University, Canada |
Session 3 |
Advanced Wireless Transceivers [Suzaku II] |
Chairpersons |
H. Ishikuro, Keio Univ.
A. Cathelin, STMicroelectronics |
10:30 |
3-1 |
A 0.38THz Fully Integrated Transceiver Utilizing
Quadrature Push-Push Circuitry |
Abstract |
J.-D. Park, S. Kang and
A.M. Niknejad |
University of California, Berkeley, USA |
10:55 |
3-2 |
A 10Gb/s 45mW Adaptive 60GHz Baseband in 65nm
CMOS |
Abstract |
C. Thakkar*, L. Kong*, K. Jung*, A. Frappé** and E.
Alon* |
*University of California, Berkeley, USA and **Institut
Supérieur de l'Electronique et du Numérique, France |
11:20 |
3-3 |
A 2.5GHz Delay-Based Wideband OFDM Outphasing
Modulator in 45nm-LP CMOS |
Abstract |
A. Ravi, P. Madoglio, M.
Verhelst, M. Sajadieh, M. Aguirre, H. Xu, S. Pellerano, I. Lomeli,
J. Zarate, L. Cuellar, O. Degani, H. Lakdawala, K. Soumyanath and
Y. Palaskas |
Intel Corporation, USA |
11:45 |
3-4 |
A Configurable Multi-Band Multi-Mode Transmitter with
Spur Cancellation Through Digital Baseband |
Abstract |
Y. Tang, M.
Chen, W. Leung, C. Narathong, M. Ranjan, K. Godbole, G. Zhang,
O. Choksi, V. Panikkath, C. Holenstein, A. Hadjichristos and K.
Sahota |
Qualcomm, USA |
12:10 |
3-5 |
A 3.5mm2, Inductor-Less Digital-Intensive Radio SoC for
300-to-950MHz ISM-Band Applications Supporting 1.0-to-240kbps Multi-Data-Rates |
Abstract |
T. Tokairin*, H. Saito**, H.
Ishizaki*, Y. Oka*, T. Maeda*, S. Oshima**, M. Soda*, M.
Okada*, S. Hori***, M. Kitsunezuka*** and M. Mizuno* |
*Renesas Electronics Corporation, **Renesas Micro Systems Co.,
Ltd. and ***NEC Corporation, Japan |
Session 4 |
Oversampling Converters [Suzaku III] |
Chairpersons |
M. Ito, Renesas Electronics Corp.
J. Lloyd, Analog Devices Inc. |
10:30 |
4-1 |
A 12-ENOB 6X-OSR Noise-Shaped Pipelined ADC
Utilizing a 9-bit Linear Front-End |
Abstract |
O. Rajaee** and U. Moon* |
*Oregon State University and **Qualcomm,
USA |
10:55 |
4-2 |
A 32nm, 1.05V, BIST Enabled, 10-40MHz, 11-9 Bit, 0.13mm2 Digitized Integrator MASH ΔΣ ADC |
Abstract |
B. R. Carlton,
H. Lakdawala, E. Alpman, J. Rizk, Y.W. Li, B. Perez-Esparza, V.
Rivera, C.F. Nieva, E. Gordon, P. Hackney, C.-H. Jan, I.A. Young
and K. Soumyanath |
Intel Corporation, USA |
11:20 |
4-3 |
A Continuous-Time, Jitter Insensitive ∑∆ Modulator Using a Digitally Linearized Gm-C Integrator with Embedded SC Feedback DAC |
Abstract |
D. Kim*, T. Matsuura** and
B. Murmann* |
*Stanford University, USA and **Renesas
Electronics Corp., Japan |
11:45 |
4-4 |
A 48-dB DR 80-MHz BW 8.88-GS/s Bandpass ∆∑ ADC for
RF Digitization with Integrated PLL and Polyphase
Decimation Filter in 40nm CMOS |
Abstract |
E. Martens, A. Bourdoux,
A. Couvreur, P. Van Wesemael, G. Van der Plas, J. Craninckx and
J. Ryckaert |
IMEC, Belgium |
12:10 |
4-5 |
A 2.8 mW ∆∑ ADC with 83 dB DR and 1.92 MHz BW Using FIR Outer Feedback and TIA-Based Integrator |
Abstract |
J.
Gealow*, M. Ashburn*, C.-H. Lou*, S. Ho*, P. Riehl*, A.
Shabra**, J. Silva* and Q. Yu* |
*MediaTek Wireless, Inc., USA
and **Masdar Institute of Science and Technology, UAE |
Session 5 |
Circuit and System Integration [Suzaku I] |
Chairpersons |
C. Hou, TSMC
B. Nikolic , Univ. of California, Berkeley |
13:55 |
5-1 |
Measurement, Analysis and Improvement of Supply
Noise in 3D ICs |
Abstract |
P. Jain, D. Jiao, X. Wang and C.H. Kim |
University of Minnesota, USA |
14:20 |
5-2 |
Isolation Techniques Against Substrate Noise Coupling
Utilizing Through Silicon Via (TSV) for RF/Mixed-Signal
SoCs |
Abstract |
S. Uemura, Y. Hiraoka, T. Kai and S. Dosho |
Panasonic
Corporation, Japan |
14:45 |
5-3 |
A Fully-Integrated Cantilever-Based DNA Detection SoC
in a CMOS Bio-MEMS Process |
Abstract |
Y.-J. Huang*, C.-W. Huang*,
T.-H. Lin*, C.-T. Lin*, L.-G. Chen*, P.-Y. Hsiao*, B.-R. Wu*, H.-T.
Hsueh*, B.-J. Kuo*, H.-H. Tsai**, H.-H. Liao**, Y.-Z. Juang**, C.-K. Wang* and S.-S. Lu* |
*National
Taiwan University and **National Applied Research Laboratories, Taiwan |
15:10 |
5-4 |
A 65nm CMOS Movable Parts Manager for Optical Disc
System |
Abstract |
F. Senoue*, K. Okamoto*, S. Sakiyama*, T. Morie*, S.
Dosho*, H. Nishino**, K. Tanimoto**, A. Kawabe** and H.
Kobayashi** |
*Panasonic Corporation and **Panasonic
Corporation Semiconductor Company Corporate, Japan |
15:35 |
5-5 |
20-µW Operation of an a-IGZO TFT-Based RFID Chip
Using Purely NMOS “Active” Load Logic Gates with
Ultra-Low-Consumption Power |
Abstract |
H. Ozaki, T. Kawamura, H.
Wakana, T. Yamazoe and H. Uchiyama |
Hitachi, Ltd., Japan |
Session 6 |
High Performance DACs and Amplifiers
[Suzaku III] |
Chairpersons |
J. Lee, National Taiwan Univ.
M. Flynn, Univ. of Michigan |
13:55 |
6-1 |
A 100dB DR Ground-Referenced Single-Ended Class-D
Amplifier in 65nm CMOS |
Abstract |
X. Jiang, J. Song, M. Wang, J. Chen,
H. Zheng, S. Galal, K. Abdelfattah and T.L. Brooks |
Broadcom
Corporation, USA |
14:20 |
6-2 |
A Ping-Pong-Pang Current-Feedback Instrumentation
Amplifier with 0.04% Gain Error |
Abstract |
S. Sakunia*, F. Witte**, M.
Pertijs* and K. Makinwa* |
*Delft University of Technology and
**National Semiconductor, The Netherlands |
14:45 |
6-3 |
A 7.2-GSa/s, 14-bit or 12-GSa/s, 12-bit DAC in a 165-GHz
fT BiCMOS Process |
Abstract |
K. Poulton, B. Jewett and J. Liu |
Agilent
Technologies, USA |
15:10 |
6-4 |
A 3GS/s, 9b, 1.2V Single Supply, Pure Binary DAC with
>50dB SFDR up to 1.5GHz in 65nm CMOS |
Abstract |
S.L. Tual*, P.N.
Singh*,***, A. Bal** and C. Garnier* |
*STMicroelectronics
Crolles, France, **STMicroelectronics G. Noida, India and
***Wolfson Microelectronics Edinburgh, UK |
15:35 |
6-5 |
A 10b 600MS/s Multi-Mode CMOS DAC for Multiple
Nyquist Zone Operation |
Abstract |
S.Y.-S. Chen, N.-S. Kim and J.
Rabaey |
University of California, Berkeley, USA |
Session 7 |
Embedded SRAM and Applications [Suzaku I] |
Chairpersons |
M. Yamaoka, Hitachi America, Ltd.
M. Clinton, Texas Instruments, Inc. |
16:10 |
7-1 |
A 40nm Fully Functional SRAM with BL Swing and WL
Pulse Measurement Scheme for Eliminating a Need for
Additional Sensing Tolerance Margins |
Abstract |
Y.-H. Chen*,**, S.-
Y. Chou*, Q. Lee*, W.-M. Chan*, D. Sun*, H.-J. Liao*, P. Wang*,
M.-F. Chang** and H. Yamauchi*** |
*TSMC, **National Tsing
Hua University, Taiwan and ***Fukuoka Institute of Technology,
Japan |
16:35 |
7-2 |
A 40-nm 0.5-V 20.1-µW/MHz 8T SRAM with Low-Energy
Disturb Mitigation Scheme |
Abstract |
S. Yoshimoto*, M. Terada*, S.
Okumura*, T. Suzuki**, S. Miyano**, H. Kawaguchi* and M.
Yoshimoto* |
*Kobe University and **Semiconductor Technology
Academic Research Center (STARC), Japan |
17:00 |
7-3 |
A Larger Stacked Layer Number Scalable TSV-Based 3D-SRAM for High-Performance Universal-Memory-Capacity
3D-IC Platforms |
Abstract |
M.-F. Chang*, W.-C. Wu*, C.-S. Lin**, P.-F.
Chiu**, M.-B. Chen*,**, Y.-H. Chen*,***, H.-C. Lai**, Z.-H.
Lin**, S.-S. Sheu**, T.-K. Ku** and H. Yamauchi**** |
*National
Tsing Hua University, **ITRI, ***TSMC, Taiwan and
****Fukuoka Institute of Technology, Japan |
17:25 |
7-4 |
A Chip-ID Generating Circuit for Dependable LSI Using
Random Address Errors on Embedded SRAM and On-Chip Memory BIST |
Abstract |
H. Fujiwara, M. Yabuuchi, H. Nakano, H.
Kawai, K. Nii and K. Arimoto |
Renesas Electronics Corporation,
Japan |
(Joint Coctail/Dinner Party19:00-21:00) |
Session 8 |
Multi Gigabit Wireline Communication [Suzaku II] |
Chairpersons |
K. Sunaga, NEC Corp.
T. C. Carusone, Univ. of Toronto |
16:10 |
8-1 |
An 8x10-Gb/s Source-Synchronous I/O System Based on
High-Density Silicon Carrier Interconnects |
Abstract |
T.O. Dickson,
Y. Liu, S.V. Rylov, B. Dang, C.K. Tsang, P.S. Andry, J.F.
Bulzacchelli, H.A. Ainspan, X. Gu, L. Turlapati, M.P. Beakes,
B.D. Parker, J.U. Knickerbocker and D.J. Friedman |
IBM T. J.
Watson Research Center, USA |
16:35 |
8-2 |
A 5.6Gb/s 2.4mW/Gb/s Bidirectional Link With 8ns
Power-On |
Abstract |
J. Zerbe*, B. Daly*, W. Dettloff*, T. Stone*, W.
Stonecypher*, P. Venkatesan*, K. Prabhu*, B. Su*, J. Ren*, B.
Tsang*, B. Leibowitz*, D. Dunwell**, A.C. Carusone** and J.
Eble* |
*Rambus Inc, USA and **University of Toronto, Canada |
17:00 |
8-3 |
An 8Gb/s Forwarded-Clock I/O Receiver with up to 1GHz
Constant Jitter Tracking Bandwidth Using a Weak
Injection-Locked Oscillator in 0.13µm CMOS |
Abstract |
S.-H.
Chung*, L.-S. Kim*, S.-J. Bae**, K.-S. Ha**, J.-B. Lee** and J.S.
Choi** |
*KAIST and **Samsung Electronics, Korea |
17:25 |
8-4 |
A 0.12mm2 5Gbps Receiver with a Level Shifting
Equalizer and a Cumulative-Histogram-Based Adaptation
Engine |
Abstract |
Y. Tomita*, H. Yamaguchi*, S. Kawahara**, T.
Higuchi**, T. Yamamoto*, H. Ishida***, K. Gotoh*** and H.
Tamura* |
*Fujitsu Laboratories LTD., **Fujitsu LSI Solutions
LTD. and ***Fujitsu Semiconductor LTD., Japan |
(Joint Coctail/Dinner Party 19:00-21:00) |
Session 9 |
Image Sensors [Suzaku III] |
Chairpersons |
Y. Kato, Panasonic Corp.
M. Whatley, Cypress Semiconductor |
16:10 |
9-1 |
A Digital CDS Scheme on Fully Column-Inline TDC
Architecture for An APS-C Format CMOS Image Sensor |
Abstract |
T. Takahashi*, H. Ui*, N. Takatori**, S. Sanada**, T.
Hamamoto**, H. Nakayama**, Y. Moriyama*, M. Akahide*, T.
Ueno* and N. Fukushima* |
*Sony Corporation and **Sony LSI
Design Incorporated, Japan |
16:35 |
9-2 |
A 640×480 Image Sensor with Unified Pixel Architecture
for 2D/3D Imaging in 0.11µm CMOS |
Abstract |
S.-J. Kim, J.D.K. Kim,
S.-W. Han, B. Kang, K. Lee and C.-Y. Kim |
Samsung Advanced
Institute of Technology, Korea |
17:00 |
9-3 |
A Dual In-Pixel Memory CMOS Image Sensor for
Computation Photography |
Abstract |
G. Wan*,**, X. Li*, G. Agranov*,
M. Levoy** and M. Horowitz** |
*Aptina, LLC and **Stanford
University, USA |
17:25 |
9-4 |
A CMOS ∑-∆ Photodetector Array for Bioluminescence-Based DNA Sequencing |
Abstract |
R.R. Singh, B. Li, A. Elligton and A.
Hassibi |
University of Texas at Austin, USA |
(Joint Coctail/Dinner Party 19:00-21:00) |
Session 10 |
Plenary Session II [Suzaku I, II] |
Chairpersons |
M. Nagata, Kobe Univ.
V. De, Intel Corp. |
8:45 |
10-1 |
Circuit Challenges for Future Computing Systems |
Invited
Abstract |
W. J. Dally, NVIDIA and Stanford Univ., USA |
9:25 |
10-2 |
Smart Devices and Services in Healthcare and Wellness |
Invited Abstract |
H. Nakajima*, and T. Shiga**, *Omron Corporation and **Omron Healthcare Co., Ltd., Japan |
Session 11 |
Fractional-N PLLs [Suzaku I] |
Chairpersons |
S.H. Cho, KAIST
U.-K. Moon, Oregon State Univ. |
10:30 |
11-1 |
A Low Spur Fractional-N Digital PLL for 802.11 a/b/g/n/ac
with 0.19 psrms Jitter |
Abstract |
C.-W. Yao, L. Lin, B. Nissim, H. Arora
and T. Cho |
Marvell Semiconductor, Inc. USA |
10:55 |
11-2 |
A -104dBc/Hz In-Band Phase Noise 3GHz All Digital PLL
with Phase Interpolation Based Hierarchical Time to
Digital Convertor |
Abstract |
D. Miyashita, H. Kobayashi, J. Deguchi, S.
Kousai and M. Hamada |
Toshiba Corporation, Japan |
11:20 |
11-3 |
A 3.6GHz 1MHz-Bandwidth
∆∑ Fractional-N PLL with a
Quantization-Noise Shifting Architecture in 0.18µm
CMOS |
Abstract |
W.-H. Chiu and T.-H. Lin |
National Taiwan University,
Taiwan |
11:45 |
11-4 |
A 2 GHz Fractional-N Digital PLL with 1b Noise Shaping ∆∑ TDC |
Abstract |
D.-W. Jee, Y.-H. Seo, H.-J. Park and J.-Y. Sim |
Pohang
University of Science and Technology (POSTECH), Korea |
Session 12 |
Pipelined ADCs [Suzaku III] |
Chairpersons |
S. Dosho, Panasonic Corp.
C.-M. Hung, MStar Semiconductor, Inc. |
10:30 |
12-1 |
A 12b 3GS/s Pipeline ADC with 500mW and 0.4 mm2 in
40nm Digital CMOS |
Abstract |
C.-Y. Chen and J. Wu |
Broadcom
Corporation, USA |
10:55 |
12-2 |
An 11b 300MS/s 0.24pJ/Conversion-Step Double-Sampling Pipelined ADC with On-Chip Full Digital
Calibration for All Nonidealities Including Memory
Effects |
Abstract |
T. Miki, T. Morie, T. Ozeki and S. Dosho |
Panasonic
Corporation, Japan |
11:20 |
12-3 |
A 22-mW 7b 1.3-GS/s Pipeline ADC with 1-Bit/Stage
Folding Converter Architecture |
Abstract |
T. Yamase*, H. Uchida**
and H. Noguchi* |
*NEC Corporation and **NEC Engineering,
Ltd., Japan |
11:45 |
12-4 |
A 10b 320 MS/s 40 mW Open-Loop Interpolated Pipeline
ADC |
Abstract |
M. Miyahara, H. Lee, D. Paik and A. Matsuzawa |
Tokyo Institute of Technology, Japan |
12:10 |
12-5 |
A 16-mW 8-Bit 1-GS/s Subranging ADC in 55nm CMOS |
Abstract |
Y.-H. Chung*,** and J.-T. Wu* |
*National Chiao-Tung University and **MediaTek Inc. Taiwan |
Thursday, June 16,
12:45-14:05 (Separate Registration Required) |
Luncheon Talk [Suzaku II] Organizer: K. Kobayashi, Kyoto Institute of Technology
|
Recent Studies about Computer Aided Origami Design
J. Mitani, Univ. of Tsukuba
Origami is well known as the Japanese traditional art of folding paper. Today, origami is loved by all generations not only in Japan but also in the world. The manipulation of folding a square sheet of paper along a straight line has a deep relation to geometry. Origami has been the target of interest for mathematicians. The ridges and valleys appear when a sheet of paper is folded and unfolded again. We can obtain a lot of insights on origami by studying its pattern, called the crease pattern. Through the achievement of our predecessors, we now have plenty of knowledge about the geometry of origami. In 1980s, techniques for designing a crease pattern for making intended form were investigated, and they spread widely. As the results, amazingly realistic and complicated origami pieces, such as insects, animals, dinosaurs and so on, had been created. Since the computers had become popular, some software for designing origami appeared on the Web. We can say that the new era of origami has begun. One of remaining challenges is designing curved-origami which has curved folds. In this talk, recent studies about computer aided origami design and some interesting topics about origami will be presented.
*To register for the Luncheon Talk please refer to the registration
form for fee information. |
Session 13 |
High Speed Digital for Interconnects [Suzaku I] |
Chairpersons |
M. Igarashi, Sony Corp.
J. Wieser, National Semiconductor Corp. |
14:20 |
13-1 |
The 10G-EPON OLT and ONU LSIs for the Coexistence of
10G-EPON and GE-PON toward the Next FTTH Era |
Abstract |
M.
Urano, T. Kawamura, S. Ohteru, H. Suto, K. Kawai, R. Kusaba, N.
Miura, J. Kato, A. Miyazaki, T. Hatano, S. Yasuda, N. Tanaka, S.
Shigematsu, M. Nakanishi and T. Shibata |
NTT Microsystem
Integration Laboratories, Japan |
14:45 |
13-2 |
A 2.37Gb/s 284.8mW Rate-Compatible (491,3,6) LDPC-CC
Decoder |
Abstract |
C.-L. Chen, Y.-H. Lin, H.-C. Chang and C.-Y. Lee |
National Chiao Tung University, Taiwan |
15:10 |
13-3 |
A 1.1 GOPS/mW FPGA Chip with Hierarchical
Interconnect Fabric |
Abstract |
C.C. Wang, F.-L. Yuan, H. Chen and D. Marković |
University of California, Los Angeles, USA |
15:35 |
13-4 |
SWIFT: A 2.1Tb/s 32×32 Self-Arbitrating Manycore
Interconnect Fabric |
Abstract |
S. Satpathy, R. Dreslinski, T.-C. Ou, D.
Sylvester, T. Mudge and D. Blaauw |
University of Michigan, USA |
Session 14 |
Bio Interfaces [Suzaku III] |
Chairpersons |
C.-Y. Lee, National Chiao Tung Univ.
K. Chang, Xilinx |
14:20 |
14-1 |
A Configurable and Low-Power Mixed Signal SoC for
Portable ECG Monitoring Applications |
Abstract |
H. Kim*, R.F.
Yazicioglu*, S. Kim*, N. Van Helleputte*, A. Artes**, M.
Konijnenburg**, J. Huisken**, J. Penders** and C. Van Hoof*,**, |
*IMEC, Belgium and **IMEC-nl/Holst center, The Netherlands |
14:45 |
14-2 |
A 96-Channel Full Data Rate Direct Neural Interface in
0.13µm CMOS |
Abstract |
R.M. Walker*, H. Gao*, P. Nuyujukian*, K.
Makinwa**, K.V. Shenoy*, T. Meng* and B. Murmann* |
*Stanford University, USA and **Delft University of Technology,
The Netherlands |
15:10 |
14-3 |
BioBolt: A Minimally-Invasive Neural Interface for
Wireless Epidural Recording by Intra-Skin
Communication |
Abstract |
S.-I. Chang, K. AlAshmouny, M. McCormick,
Y.-C. Chen and E. Yoon |
University of Michigan, USA |
15:35 |
14-4 |
A Photovoltaic-Driven and Energy-Autonomous CMOS
Implantable Sensor |
Abstract |
S. Ayazian*, E. Soenen** and A. Hassibi* |
*University of Texas at Austin and **TSMC, USA
|
Session 15 |
Clocking Building Blocks [Suzaku I] |
Chairpersons |
H.-J. Park, Pohang Univ. of Science and Technology (POSTECH)
A. Emami, CalTech |
16:15 |
15-1 |
A 0.63ps Resolution, 11b Pipeline TDC in 0.13µm CMOS |
Abstract |
Y.-H. Seo, J.-S. Kim, H.-J. Park and J.-Y. Sim |
Pohang University
of Science and Technology (POSTECH), Korea |
16:40 |
15-2 |
553-GHz Signal Generation in CMOS Using a Quadruple-Push Oscillator |
Abstract |
D. Shim*, D. Koukis*, D.J. Arenas*, D.B.
Tanner* and Kenneth K. O.** |
*University of Florida and
**University of Texas at Dallas, USA |
17:05 |
15-3 |
High-PSRR All-Digital Delay Locked Loop with Burst
Update Mode and Power Noise Damping Scheme |
Abstract |
Y. Kim,
J. Jang, J. Moon, S. Lee, D. Kwon, H. Choi, G. Park and B. Chung |
Hynix Semiconductor, Korea |
17:30 |
15-4 |
A Programmable MEMS-Based Clock Generator with
Sub-ps Jitter Performance |
Abstract |
F.S. Lee*, J. Salvia*, C. Lee**, S.
Mukherjee*, R. Melamud*, N. Arumugam*, S. Pamarti***, C.
Arft*, P. Gupta*, S. Tabatabaei*, B. Garlepp**, H.-C. Lee*, A.
Partridge*, M.H. Perrott**** and F. Assaderaghi* |
*SiTime,
**Silicon Laboratories, ***University of California, Los Angeles, USA and
****Masdar Institute, UAE |
Session 16 |
Ultra Low Power Transceivers [Suzaku II] |
Chairpersons |
K. Agawa, Toshiba Corp.
J. Savoj, Xilinx |
16:15 |
16-1 |
A Battery-Less WiFi-BER Modulated Data Transmitter
with Ambient Radio-Wave Energy Harvesting |
Abstract |
H. Ishizaki*,
H. Ikeda*, Y. Yoshida**, T. Maeda*, T. Kuroda** and M.
Mizuno* |
*Renesas Electronics Corporation and **Keio
University, Japan |
16:40 |
16-2 |
315MHz Energy-Efficient Injection-Locked OOK
Transmitter and 8.4µW Power-Gated Receiver Front-End
for Wireless Ad Hoc Network in 40nm CMOS |
Abstract |
L. Liu, T.
Sakurai and M. Takamiya |
The University of Tokyo, Japan |
17:05 |
16-3 |
A 550µW Inductorless Bandpass Quantizer in 65nm
CMOS for 1.4-to-3GHz Digital RF Receivers |
Abstract |
D. Lachartre |
CEA, LETI, France |
17:30 |
16-4 |
A 1mm3 2Mbps 330fJ/b Transponder for Implanted Neural
Sensors |
Abstract |
M. Mark, Y. Chen, C. Sutardja, C. Tang, S. Gowda, M.
Wagner, D. Werthimer and J. Rabaey |
University of California,
Berkeley, USA |
Session 17 |
Bio Sensors and Applications [Suzaku III] |
Chairpersons |
M. Ikeda, The Univ. of Tokyo
B. Nauta, Univ. of Twente |
16:15 |
17-1 |
A 0.5-V Sub-mW Wireless Magnetic Tracking
Transponder for Radiation Therapy |
Abstract |
W.-F. Loke*, W.-H.
Chen*, T. Maleki*, M.A. Khater*, B. Ziaie*, L. Papiez** and B.
Jung* |
*Purdue University and **UT Southwestern Medical
School, USA |
16:40 |
17-2 |
A 256 Channel Magnetoresistive Biosensor Microarray
for Quantitative Proteomics |
Abstract |
D.A. Hall*, R.S. Gaster*, S.J.
Osterfeld*, K. Makinwa**, S.X. Wang* and B. Murmann* |
*Stanford
University, USA and **Delft University of Technology, The
Netherlands |
17:05 |
17-3 |
Magnetic Relaxation Detector for Microbead Labels in
Biomedical Assays |
Abstract |
P. Liu, K. Skucha, Y. Duan, M. Megens, J.
Kim, I. Izyumin, S. Gambini and B. Boser |
University of California, Berkeley, USA |
17:30 |
17-4 |
Low Power Control IC for Efficient High-Voltage
Piezoelectric Driving in a Flying Robotic Insect |
Abstract |
M.
Karpelson, R.J. Wood and G.-Y. Wei |
Harvard University, USA |
Rump Sessions
|
Organizers |
K. Nose, Renesas Electronics Corp.
K. Chang, Xilinx |
R-1 |
Special Evening Session : NVM Technology and New Application Opportunities [Suzaku I, II] |
Organizers |
H. Yamauchi, Fukuoka Institute of Technology M. Bauer, Micron Technology, Inc. |
Moderator |
M. Bauer, Micron Technology, Inc. |
Speakers |
FLASH : K-T. Park, Samsung Electronics
PCM : E. Doller, Micron Technology, Inc.
MRAM : K. Tsuchida, Toshiba Corp.
RRAM : K. Takeuchi, The Univ. of Tokyo
FRAM : T. Moise, Texas Instruments
|
NAND Flash is the industry incumbent NVM. However new materials either being developed or are in production are frequently being compared to Flash. We need to start considering attributes of all memory types, which applications they are best suited for, and what new applications all NVM types may enable. This session will include five experts representing different NVM technologies: PCM, MRAM, FRAM and RRAM and the incumbent NAND Flash. Each speaker will: 1) describe the memory technology from a cell perspective, then how it works in an array, followed by the resulting characteristics such as latency, power, retention, endurance, and cost. 2) Consider key applications for their technology being explicit about why the technology is the best fit and why a company would be compelled to invest in such a technology. This is not to be a discussion of on which technology is then next NAND replacement. The intent is to answer questions such as: Does the technology a good fit for existing applications? Will it drive new applications? Can one NVM technology complement another for an overall better solution than either one on its own?
We consider one technology at a time: Speaker presents his technology for 20 minutes then open the discussion for feedback or opinion from the other four panelists, and finally questions from the audience. Then on to the next topic until all five technologies have been discussed. |
R-2 |
Will Circuit Design be a Key Issue in Biomedical Applications? (or Boring Circuits?) [Suzaku III] |
Organizers |
A. Cathelin, STMicroelectronics
M. Takamiya, The Univ. of Tokyo |
Moderator |
A. Cathelin, STMicroelectronics
|
Panelists |
J. Ohta, Nara Institute of Science and Technology
J. Rabaey, Univ. of California, Berkeley
K. Shepard, Columbia Univ.
M. Flynn, Univ. of Michigan
H. Takahashi, The Univ. of Tokyo
C.-C. Wu, National Taiwan Univ. Hospital
M. M. Maharbiz, Univ. of California, Berkeley
|
Since one decade now there is growing interest for bio-medical applications among IC designers. Several directions are explored such as:
- improving existing electronics medical aid by miniaturization/ lowering power consumption/ improving reliability
- supporting medical aid in new fields by advanced IC technology
- new exploratory fields that are possible only by advantageous medical and microelectronics joint research
We have assembled a distinguished panel of experts who will discuss and debate on these topics. At the end of the day, the goal of this collaborative panel is to draw answers to the following questions:
- Will circuit design be a key issue in biomedical applications and which IC technology to use?
- Which are the technologies to bring together for succeeding circuits in biomedical field?
- What should circuit designers do in biomedical applications?
- Is consumer product type qualification enough/ sufficient for medical application products?
- Which are the ethic problems to be solved before launching mass production bio-medical products? |
Tuesday, June 14 20:00-22:00 |
Joint Rump Session
|
Title: |
Low Voltage - How Low can we go with Technology and Design Solutions? [Suzaku I, II] |
Organizers |
S. Dosho, Panasonic Corp.
M. Clinton, Texas Instruments, Inc.
N. Kasai, Tohoku Univ.
T. Skotnicki, STMicroelectronics |
Moderator |
K. Ishimaru, Toshiba Corp.
K. Zhang, Intel Corp. |
Panelists |
F. Boeuf, STMicroelectronics
B. Calhoun, Univ. of Virginia
M. Ieong, TSMC
K. Rim, IBM Corp.
S. Kosonocky, AMD
A. Matsuzawa, Tokyo Institute of Technology
S. Paak, Samsung Electronics
H. Shinohara, STARC
|
Continually lowering IC voltage levels has been critical to continued device scaling for a long time, but now many circuit designers are finding it increasingly difficult to design robust circuits with the lower voltage levels. Is it possible that Moore’s Law will end due to our inability to reduce voltage levels, and not because of our inability to further scale transistors? We have assembled a distinguished panel to debate some of the following questions, and much more:
- What role does technology play in requiring lower operating voltages? What is the role of circuit design?
- Lower operating voltages cause problems (and benefits) for circuit designers, are there technology solutions to some of these problems? Conversely, if voltage levels are not scaled this will cause device problems and is it possible that there are circuit solutions to these technology problems?
- Are voltage levels low enough today, or how much lower can we expect them to go in the future?
*This session will be held at 20:00 - 22:00 on Tuesday, June 14. |
Session 18 |
High Performance Circuit Techniques
[Suzaku I] |
Chairpersons |
H. Kabuo, Panasonic Corp.
J. Chang, TSMC |
8:30 |
18-1 |
A 27% Active-Power-Reduced 40-nm CMOS Multimedia
SoC with Adaptive Voltage Scaling Using Distributed
Universal Delay Lines |
Abstract |
Y. Ikenaga*, M. Nomura*, S. Suenaga*,
H. Sonohara*, Y. Horikoshi*, T. Saito*, Y. Ohdaira**, Y.
Nishio***, T. Iwashita**, M. Satou**, K. Nishida*, K. Nose*, K.
Noguchi*, Y. Hayashi* and M. Mizuno* |
*Renesas Electronics
Corporation, **Renesas Mobile Corporation and ***Renesas
Micro Systems Co., Ltd., Japan |
8:55 |
18-2 |
LC2: Limited Contention Level Converter for Robust
Wide-Range Voltage Conversion |
Abstract |
Y. Kim, D. Sylvester and
D. Blaauw |
University of Michigan, USA |
9:20 |
18-3 |
Adaptive Robustness Tuning for High Performance
Domino Logic |
Abstract |
B. Giridhar*, D. Fick*, M. Fojtik*, S. Satpathy*,
D. Bull**, D. Sylvester* and D. Blaauw* |
*University of
Michigan, USA and **ARM, United Kingdom |
9:45 |
18-4 |
A 381 fs/bit, 51.7 nW/bit Nearest Hamming-Distance
Search Circuit in 65 nm CMOS |
Abstract |
H.J. Mattausch, M. Yasuda,
A. Kawabata, W. Imafuku and T. Koide |
Hiroshima University,
Japan |
Session 19 |
Nonvolatile Memories [Suzaku II] |
Chairpersons |
K. Kajigaya, Elpida Memory, Inc.
M. Bauer, Micron Technology, Inc. |
8:30 |
19-1 |
A 21nm High Performance 64Gb MLC NAND Flash
Memory with 400MB/s Asynchronous Toggle DDR
Interface |
Abstract |
C. Kim, J. Ryu, T. Lee, H. Kim, J. Lim, J. Jeong, S.
Seo, H. Jeon, B. Kim, I. Lee, D. Lee, P. Kwak, S. Cho, Y. Yim, C.
Cho, W. Jeong, J.-M. Han, D. Song, K. Kyung, Y.-H. Lim and Y.-H. Jun |
Samsung Electronics, Korea |
8:55 |
19-2 |
A Fast Rewritable 90nm 512Mb NOR “B4-Flash” Memory
with 8F2 Cell Size |
Abstract |
T. Ogura, M. Mihara, Y. Kawajiri, K.
Kobayashi, T. Sakaniwa, K. Nishikawa, S. Shimizu, S. Shukuri, N.
Ajika and M. Nakashima |
GENUSION, Inc., Japan |
9:20 |
19-3 |
4-Times Faster Rising
VPASS(10V),
15% Lower Power
VPGM (20V), Wide Output Voltage Range Voltage Generator
System for
4-Times Faster 3D-Integrated Solid-State
Drives |
Abstract |
T. Hatanaka and K. Takeuchi |
The University of Tokyo, Japan |
9:45 |
19-4 |
A 512Mb Phase-Change Memory (PCM) in 90nm CMOS
Achieving 2b/cell |
Abstract |
G.F. Close*, U. Frey*,****, J. Morrish**, R.
Jordan**, S. Lewis**, T. Maffitt**, M. Breitwisch***, C.
Hagleitner*, C. Lam*** and E. Eleftheriou* |
*IBM Research Zurich,
Switzerland, **IBM Essex Junction, ***IBM T. J. Watson
Research Center, USA and ****RIKEN, Japan |
Session 20 |
High Speed and Low Power Receiver Techniques [Suzaku III] |
Chairpersons |
S. Mutoh, NTT Corp.
A. Emami, CalTech |
8:30 |
20-1 |
A 20-Gb/s, 0.66-pJ/bit Serial Receiver with 2-Stage
Continuous-Time Linear Equalizer and 1-Tap Decision
Feedback Equalizer in 45nm SOI CMOS |
Abstract |
J.E. Proesel and
T.O. Dickson |
IBM T. J. Watson Research Center, USA |
8:55 |
20-2 |
A 40Gb/s Adaptive Receiver with Linear Equalizer and
Merged DFE/CDR |
Abstract |
C.-L. Hsieh and S.-I. Liu |
National Taiwan University, Taiwan |
9:20 |
20-3 |
A 2.6mW/Gbps 12.5Gbps RX with 8-Tap Switched-Cap
DFE in 32nm CMOS |
Abstract |
T. Toifl*, C. Menolfi*, M. Ruegg**, R.
Reutemann**, A. Prati**, D. Gardellini**, M. Brändli*, M.
Kossel*, P. Buchmann*, P.A. Francese* and T. Morf* |
*IBM
Research GmbH and **Miromico, Switzerland |
9:45 |
20-4 |
A 4.4uW Wake-Up Receiver Using Ultrasound Data
Communications |
Abstract |
K. Yadav, I. Kymissis and P.R. Kinget |
Columbia University, USA |
Session 21 |
Device-Based Circuit Techniques [Suzaku I] |
Chairpersons |
K. Kobayashi, Kyoto Institute of Technology
G. Lehmann, Infineon Technologies AG |
10:30 |
21-1 |
A True Random Number Generator Using Time-Dependent Dielectric Breakdown |
Abstract |
N. Liu, N. Pinckney, S.
Hanson, D. Sylvester and D. Blaauw |
University of Michigan,
USA |
10:55 |
21-2 |
On-Chip Combined C-V/I-V Transistor Characterization
System in 45-nm CMOS |
Abstract |
S. Realov and K.L. Shepard |
Columbia University, USA |
11:20 |
21-3 |
Electrical Monitoring of Gate and Active Area Mask
Misalignment Error |
Abstract |
A. Bansal*, A. Singhee*, E. Acar* and G.
Costrini** |
*IBM T. J. Watson Research Center and **IBM
Systems & Technology Group, USA |
11:45 |
21-4 |
A 80kS/s 36µW Resistor-Based Temperature Sensor
Using BGR-Free SAR ADC with a Unevenly-Weighted
Resistor String in 0.18µm CMOS |
Abstract |
C.-K. Wu, W.-S. Chan and
T.-H. Lin |
National Taiwan University, Taiwan |
12:10 |
21-5 |
PBTI/NBTI Monitoring Ring Oscillator Circuits with On-Chip Vt Characterization and High Frequency AC Stress
Capability |
Abstract |
J.-J. Kim*, R.M. Rao*, J. Schaub**, A. Ghosh**, A.
Bansal*, K. Zhao***, B.P. Linder* and J. Stathis* |
*IBM T. J.
Watson Research Center, **IBM Austin Research Lab and
***IBM SRDC, USA |
Session 22 |
DRAM and Memory Interfaces [Suzaku II] |
Chairpersons |
R. Takemura, Hitachi, Ltd.
J. Zerbe, Rambus |
10:30 |
22-1 |
3D Stackable 32nm High-K/Metal Gate SOI Embedded
DRAM Prototype |
Abstract |
J. Golz, J. Safran, B. He, D. Leu, M. Yin, T.
Weaver, A. Vehabovic, Y. Sun, A. Cestero, B. Himmel, G. Maier,
C. Kothandaraman, D. Fainstein, J. Barth, N. Robson, T. Kirihata,
K. Rim and S. Iyer |
IBM Systems and Technology Group, USA |
10:55 |
22-2 |
In-Substrate-Bitline Sense Amplifier with Array-Noise-
Gating Scheme for Low-Noise 4F 2 DRAM Array Operable
at 10-fF Cell Capacitance |
Abstract |
Y. Yanagawa, T. Sekiguchi, A.
Kotabe, K. Ono and R. Takemura |
Hitachi, Ltd., Japan |
11:20 |
22-3 |
A 12.8-Gb/s/Link Tri-Modal Single-Ended Memory
Interface for Graphics Applications |
Abstract |
A. Amirkhany, J. Wei,
N. Mishra, J. Shen, W. Beyene, T. Chin, C. Huang, V. Gadde, K.
Kaviani, P. Le, Mahabaleshwara, C. Madden, S. Mukherjee, L. Raghavan, K.
Saito, D. Secker, F. Shuaeb, S. Srinivas, T. Wu, C. Tran, A.
Vaidyanathan, K. Vyas, M. Jain, K. Chang and C. Yuan |
Rambus
Inc., USA |
11:45 |
22-4 |
A Tri-Modal 20Gbps/link Differential/DDR3/GDDR5
Memory Interface |
Abstract |
K. Kaviani, T. Wu, A. Amirkhany, J. Wei, J.
Shen, C. Chen, T. Chin, W. Beyene, D. Dressler, V. Gadde, C. Huang, P. Le, Mahabaleshwara, C. Madden, N. Mishra, L. Raghavan, K. Saito, D. Secker,
X. Shi, F. Shuaeb, S. Srinivas, C. Tran, A. Vaidyanath, K. Vyas, M.
Jain, K. Chang and C. Yuan |
Rambus Inc., USA |
Session 23 |
Power Management for Energy Harvesting
[Suzaku III] |
Chairpersons |
M. Takamiya, The Univ. of Tokyo
B. Nikolic, Univ of California, Berkeley |
10:30 |
23-1 |
Platform Architecture for Solar, Thermal and Vibration
Energy Combining with MPPT and Single Inductor |
Abstract |
S.
Bandyopadhyay and A.P. Chandrakasan |
Massachusetts Institute of
Technology, USA |
10:55 |
23-2 |
A Reconfigurable SITITO Boost/Buck Regulator with
Sub-Threshold Cross-Regulation-Free Dual-Mode
Control for Energy-Harvesting Applications |
Abstract |
M. Du, H. Lee
and J. Liu |
University of Texas at Dallas, USA |
11:20 |
23-3 |
A Battery-Free 225 nW Buck Converter for Wireless RF
Energy Harvesting with Dynamic On/Off Time and
Adaptive Phase Lead Control |
Abstract |
C.-Y. Hsieh*, Y.-H. Lee*, Y.-Y. Yang*, T.-C. Huang*, K.-H. Chen*, C.-C. Huang** and Y.-H.
Lin** |
*National Chiao Tung University and **Realtek
Semiconductor Corp., Taiwan |
11:45 |
23-4 |
A Fully-Integrated System Power Aware LDO for Energy
Harvesting Applications |
Abstract |
M. Lüders*, B. Eversmann**, J.
Gerber**, K. Huber**, R. Kuhn**, D. Schmitt-Landsiedel* and R.
Brederlow** |
*Munich University of Technology and **Texas
Instruments, Germany |
12:10 |
23-5 |
A 13.56MHz CMOS Rectifier with Switched-Offset for
Reversion Current Control |
Abstract |
Y. Lu*, W.-H. Ki* and J. Yi** |
*HKUST and **Texas Instruments, China |
Session 24 |
Digital Processors [Suzaku I] |
Chairpersons |
H. Kabuo, Panasonic Corp.
K. Wilcox, AMD |
13:55 |
24-1 |
A 45nm 48-Core IA Processor with Variation-Aware
Scheduling and Optimal Core Mapping |
Abstract |
S. Dighe*, S.
Gupta**, V. De*, S. Vangal*, N. Borkar*, S. Borkar* and K.
Roy** |
*Intel Corporation and **Purdue University, USA |
14:20 |
24-2 |
A 75µW, 16-Channel Neural Spike-Sorting Processor
with Unsupervised Clustering |
Abstract |
V. Karkare, S. Gibson, C.-H.
Yang, H. Chen and D. Marković |
University of California, Los
Angeles, USA |
14:45 |
24-3 |
A 7.4mW 200MS/s Wideband Spectrum Sensing Digital
Baseband Processor for Cognitive Radios |
Abstract |
T.-H. Yu, C.-H.
Yang, D.
Čabrić and D. Marković |
University of California, Los
Angeles, USA |
15:10 |
24-4 |
Fully Integrated CMOS SoC for 3D Blu-Ray Player
Applications |
Abstract |
C.-C. Ju, T.-M. Liu, S.-H. Lin, C.-C. Yang, T.-H.
Wei, H. Lin, C.C. Chiou, C. Tsai, T. Lin, R. Su, A. Lin, M.N. Tsou,
J. Lee, S.H. Tai, C.-M. Wang, C.-C. Chen, H.-M. Lin, C.-Y. Cheng,
F. Chiu, Y.-C. Chang, P.H. Liu, C.C. Yu, E. Tsai, Y.C. Fang, K.
Peng, J.-B. Yang, D.-P. Liu, K.-H. Chen, B.-W. Hsieh, Y.-C. Lien,
W.H. Tu, C.H. Chou, T.H. Kang, L.-C. Wang, T.C. Hsiao, V. Lin, H.
Hsieh, C.-S. Wu and J. Chen |
Mediatek Inc., Taiwan |
15:35 |
24-5 |
A 52mW Full HD 160-Degree Object Viewpoint
Recognition SoC with Visual Vocabulary Processor for
Wearable Vision Applications |
Abstract |
Y.-C. Su, K.-Y. Huang, T.-W.
Chen, Y.-M. Tsai, S.-Y. Chien and L.-G. Chen |
National Taiwan
University, Taiwan |
Session 25 |
Emerging ADCs [Suzaku II] |
Chairpersons |
M. Yoshioka, FUJITSU LABORATORIES LTD.
I. Fujimori, Broadcom Corp. |
13:55 |
25-1 |
A 0.5V 1.1MS/sec 6.3fJ/conversion-step SAR-ADC with
Tri-Level Comparator in 40nm CMOS |
Abstract |
A. Shikata, R.
Sekimoto, T. Kuroda and H. Ishikuro |
Keio University, Japan |
14:20 |
25-2 |
A 1-V, 8b, 40MS/s, 113µW Charge-Recycling SAR ADC
with a 14µW Asynchronous Controller |
Abstract |
J.-H. Tsai, Y.-J.
Chen, M.-H. Shen and P.-C. Huang |
National Tsing Hua
University, Taiwan |
14:45 |
25-3 |
Digitally Synthesized Stochastic Flash ADC Using Only
Standard Digital Cells |
Abstract |
S. Weaver*, B. Hershberg** and U.-K.
Moon** |
*Intel Corporation and **Oregon State University, USA |
15:10 |
25-4 |
A Reconfigurable 1GSps to 250MSps, 7-bit to 9-bit Highly
Time-Interleaved Counter ADC in 0.13µm CMOS |
Abstract |
S.
Danesh*,**, J. Hurwitz**, K. Findlater**, D. Renshaw* and R.
Henderson* |
*Edinburgh
University and **Gigle Networks, UK |
15:35 |
25-5 |
A 71dB SFDR Open Loop VCO-Based ADC Using 2-Level
PWM Modulation |
Abstract |
S. Rao, B. Young, A. Elshazly, W. Yin, N.
Sasidhar and P.K. Hanumolu |
Oregon State University Corvallis,
USA |
Session 26 |
Power Management Technique [Suzaku III] |
Chairpersons |
K. Nose, Renesas Electronics Corp.
G. Van der Plas, IMEC |
13:55 |
26-1 |
Dual-Loop System of Distributed Microregulators with
High DC Accuracy, Load Response Time Below 500ps,
and 85mV Dropout Voltage |
Abstract |
Z. Toprak-Deniz*, J. Bulzacchelli*, T. Rasmus**, J. Iadanza**, W. Bucossi**, S. Kim*, R. Blanco**, C. Cox**, M. Chhabra**, C. Leblanc**, C. Trudeau** and D. Friedman* |
*IBM T. J. Watson Research Center and **IBM Systems and Technology Group, USA |
14:20 |
26-2 |
MEMS-Switch-Based Power Management with Zero-Power Voltage Monitoring for Energy Accumulation
Architecture on Dust-Size Wireless Sensor Nodes |
Abstract |
T.
Shimamura, M. Ugajin, K. Kuwabara, K. Takagahara, K. Suzuki,
H. Morimura, M. Harada and S. Mutoh |
NTT Microsystem
Integration Laboratories, Japan |
14:45 |
26-3 |
A 210 nW 29.3 ppm/°C 0.7 V Voltage Reference with a Temperature Range of -50 to 130°C in 0.13 µm CMOS |
Abstract |
J.
Lee and S.H. Cho |
KAIST, Korea |
15:10 |
26-4 |
A Voltage-Reference-Free Pulse Density Modulation
(VRF-PDM) 1-V Input Switched-Capacitor 1/2 Voltage
Converter with Output Voltage Trimming by Hot Carrier
Injection and Periodic Activation Scheme |
Abstract |
X. Zhang*, Y.
Pu*, K. Ishida*, Y. Ryu**, Y. Okuma**, P.-H. Chen*, K.
Watanabe**, T. Sakurai* and M. Takamiya* |
*The University of Tokyo
and **Semiconductor Technology Academic Research Center
(STARC), Japan |
15:35 |
26-5 |
A Fast-Transient DVS-Capable Switching Converter with ∆IL-Emulated Hysteretic Control |
Abstract |
H. Chen and D. Ma |
The
University of Texas at Dallas, USA |
Session 27 |
Signal Processing for Wireline [Suzaku I] |
Chairpersons |
K. Sunaga, MediaTek Wireless, Inc.
J. Gealow, NEC Corp. |
16:15 |
27-1 |
A Laser Ranging Radar Transceiver with Modulated
Evaluation Clock in 65nm CMOS Technology |
Abstract |
W.-L. Lee,
K.-C. Wu, J.-Y. Jiang and J. Lee |
National Taiwan University,
Taiwan |
16:40 |
27-2 |
10Gb/s Serial I/O Receiver Based on Variable Reference
ADC |
Abstract |
E.-H. Chen, R. Yousry, T. Ali and C.-K.K. Yang |
University
of California, Los Angeles, USA |
17:05 |
27-3 |
10 Gbps, 530 fJ/b Optical Transceiver Circuits in 40 nm
CMOS |
Abstract |
F. Liu*, D. Patil***, J. Lexau*, P. Amberg*, M.
Dayringer*, J. Gainsley*, H.F. Moghadam*, X. Zheng*, J.E.
Cunningham*, A.V. Krishnamoorthy*, E. Alon** and R. Ho* |
*Oracle Labs, **University of California, Berkeley and ***Rambus, USA |
17:30 |
27-4 |
A Direct Sampling Multi-Channel Receiver for DOCSIS
3.0 in 65nm CMOS |
Abstract |
E. Janssen*, K. Doris*, A. Zanikopoulos*,
G. van der Weide*, M. Vertregt*, O. Jamin**, F. Courtois**, N.
Blard**, M. Kristen**, S. Bertrand**, F. Riviere**, F. Deforeit**,
G. Blanc**, Y. Penning**, F. Lefebvre**, D. Viguier**, M.
Dubois**, V. Vrignaud**, C. Cazettes**, L. Schaller** and G.
Jenvrin** |
*NXP Semiconductors, Eindhoven, The Netherlands and **NXP Semiconductors, Caen, France |
Session 28 |
Nonvolatile Memory Applications [Suzaku II] |
Chairpersons |
H. Yamauchi, Fukuoka Institute of Technology
O. Jungroth, Intel Corp. |
16:15 |
28-1 |
A 45nm 1Mb Embedded STT-MRAM with Design
Techniques to Minimize Read-Disturbance |
Abstract |
J.P. Kim, T.
Kim, W. Hao, H.M. Rao, K. Lee, X. Zhu, X. Li, W. Hsu, S.H.
Kang, N. Matt and N. Yu |
Qualcomm Incorporated, USA |
16:40 |
28-2 |
Fully Parallel 6T-2MTJ Nonvolatile TCAM with Single-Transistor-Based Self Match-Line Discharge Control |
Abstract |
S.
Matsunaga*, A. Katsumata*, M. Natsui*, S. Fukami**, T. Endoh*,
H. Ohno* and T. Hanyu* |
*Tohoku University and **NEC
Corporation, Japan |
17:05 |
28-3 |
A Content Addressable Memory Using Magnetic Domain
Wall Motion Cells |
Abstract |
R. Nebashi*, N. Sakimura*, Y. Tsuji*, S.
Fukami*, H. Honjo*, S. Saito*, S. Miura*, N. Ishiwata*, K.
Kinoshita*, T. Hanyu**, T. Endoh**, N. Kasai**, H. Ohno** and
T. Sugibayashi* |
*NEC Corporation and **Tohoku University,
Japan |
17:30 |
28-4 |
A Non-volatile Look-Up Table Design Using PCM (Phase-Change Memory) Cells |
Abstract |
C.-Y. Wen*, J. Li**, S. Kim**, M.
Breitwisch**, C. Lam**, J. Paramesh* and L.T. Pileggi* |
*Carnegie Mellon University and **IBM T. J. Watson Research
Center, USA |
|